Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory

ABSTRACT

A magnetoresistance effect element includes a first ferromagnetic layer ( 1 ), insulating layer ( 3 ) overlying the first ferromagnetic layer, and second ferromagnetic layer ( 2 ) overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application is based upon and claims the benefit of priorityfrom the prior Japanese Patent Application No. 2001-284467, filed onSep. 19, 2001; the entire contents of which are incorporated herein byreference.

BACKGROUND OF THE INVENTION

[0002] This invention relates to a magnetoresistance effect (MR)element, its manufacturing method, magnetic recording element andmagnetic memory. More particularly, the invention relates to amagnetoresistance effect element having magnetic nanocontacts thatexhibit high magnetoresistance ratios, its manufacturing method,magnetic reproducing element and magnetic memory.

[0003] Since the discovery that giant magnetoresistance effect isexpressed when a current is supplied to flow in parallel with the majorplane of a multi-layered structure, efforts have been paid to findsystems having still larger magnetoresistance ratios. Heretofore,ferromagnetic tunnel junction elements and CPP (current perpendicular toplane) type MR elements in which electric current flows vertically in amulti-layered structure have been developed and regarded hopeful asmagnetic sensors and reproducing elements of for magnetic recording.

[0004] In the technical field of magnetic recording, enhancement of therecording density inevitably requires miniaturization of the recordingbit, and this makes it more and more difficult to ensure sufficientsignal intensity. Accordingly, materials exhibiting more sensitivemagnetoresistance effect are demanded, and the importance of systemshaving large magnetoresistance ratios as referred to above is gettinghigher and higher.

[0005] Recently, “magnetic nanocontacts” by tip-to-tip abutment of twonickel (Ni) needles and nanocontacts by contact of two magnetiteelements were reported as elements exhibiting 100% or highermagnetoresistive effects in the literatures, (1) Garcia, M. Munoz and Y.-W. Zhao, Physical Review Letters, vol.82, p2923(1999) and (2) J. J.Versluijs, M. A. Bari and J. W. D. Coery, Physical Review Letters,vol.87, p26601-1 (2001), respectively. These nanocontacts certainlyexhibit large magnetoresistive changes. In both proposals, however, themagnetic nanocontacts are made by bringing two needle-shaped ortriangular-shaped ferromagnetic elements into tip-to-tip contact.

[0006] More recently, magnetic nanocontacts which was formed byarranging two thin nickel wires in a “T”-configuration and by growing amicro column at the connecting point thereof by electroplating techniquewere reported in the literatures, (3) N. Garcia et. al., Appl. Phys.Lett., vol.80, pl785 (2002) and (4) H. D. Chopra and S. Z. Hua, Phys.Rev. B, vol.66, p.20403-1 (2002).

[0007] These magnetic nanocontacts exhibit a large mangetoresistancechange, however, the strucutre of the nanocontacts makes it almostimpossible to realize a practical magnetoresistance effect element.

[0008] Another group has reported a magnetic nanocontact which wasformed by growing a cluster of nickel by an electroplating technique ina pinthrough hole made on an alumina layer in the literature, (5) M.Munoz, G. G. Qian, N. Karar, H. Cheng, I. G. Saveliev, N. Garcia, T. P.Moffat, P. J. Chen, L. Gan, and W. F. Egelhoff, Jr., Appl. Phys. Lett.,vol.79, p.2946, (2001).

[0009] However, it is difficult to control the magnetic domain structureand the configuration of the point contact, therefore, the resultedmagnetoresistance ratio is as small as 14% or even smaller.

[0010] Magnetic nanocontacts have a potential to exhibit a largemagnetoresistance ratio, however, in order to ensure a largemagnetoresistive effect therewith, structures proposed by thoseliteratures must put two needle-shaped ferromagnetic elements intip-to-tip abutment ensure or they must grow a micro column between twowires by an electroplating technique, and this and other requirementsmake it difficult to accurately control the contact portions in themanufacturing process. Taking account of their application to magneticheads or solid magnetic memory devices, it is necessary to develop astructure of nanocontacts suitable for mass production under reasonablecontrol, as well as its manufacturing method. Additionally, to detectthe difference in magnetization directions of opposite sides of ananocontact, control of magnetic domains of both magnetic electrodes isimportant. Therefore, in order to realize a practical magnetoresistanceeffect element, it is essential to develop a structure where the controlof the magnetic domains of the both magnetic electrodes is quite easy.

SUMMARY OF THE INVENTION

[0011] According to the embodiment of the invention, there is provided amagnetoresistance effect element comprising: a first ferromagneticlayer; an insulating layer overlying said first ferromagnetic layer; anda second ferromagnetic layer overlying said insulating layer, saidinsulating layer having a through hole penetrating its thicknessdirection at its predetermined position, said first ferromagnetic layerand said second ferromagnetic layer being electrically connected to eachother via said through hole, and said through hole having an openingwidth not larger than 20 nm.

[0012] According to another embodiment of the invention, there isprovided a magnetic reproducing element comprising a magnetoresistanceeffect element including: a first ferromagnetic layer; an insulatinglayer overlying said first ferromagnetic layer; and a secondferromagnetic layer overlying said insulating layer, said insulatinglayer having a through hole penetrating its thickness direction at itspredetermined position, said first ferromagnetic layer and said secondferromagnetic layer being electrically connected to each other via saidthrough hole, and said through hole having an opening width not largerthan 20 nm, said magnetoresistance effect element being provided on apath of the magnetic flux emitted from a magnetic recording medium sothat said first and second ferromagnetic layers are serially aligned ona path of the magnetic flux emitted from a magnetic recording medium,and said magnetoresistance effect element detects a difference betweenmagnetization directions of said first and second ferromagnetic layersas a resistance change According to yet another embodiment of theinvention, there is provided a magnetic reproducing element comprising amagnetoresistance effect element including: a first ferromagnetic layer;an insulating layer overlying said first ferromagnetic layer; and asecond ferromagnetic layer overlying said insulating layer, saidinsulating layer having a through hole penetrating its thicknessdirection at its predetermined position, said first ferromagnetic layerand said second ferromagnetic layer being electrically connected to eachother via said through hole, and said through hole having an openingwidth not larger than 20 nm, and said magnetoresistance effect beingarranged so as to make a main plane of said first ferromagnetic layerbeing substantially perpendicular to a recording surface of saidmagnetic recording medium.

[0013] According to yet another embodiment of the invention, there isprovided a magnetic memory comprising: magnetoresistance effect elementincluding: a first ferromagnetic layer being pinned in magnetization ina first direction; an insulating layer overlying said firstferromagnetic layer; a second ferromagnetic layer overlying saidinsulating layer, said second ferromagnetic layer being free indirection of magnetization, and at least one of a reading and a writingbeing executable by flowing a current in a direction of its layerthickness; a nonmagnetic intermediate layer overlying said secondferromagnetic layer; and a third ferromagnetic layer overlying saidnonmagnetic intermediate layer and being pinned in magnetization in asecond direction substantially opposite from said first direction, saidinsulating layer having a through hole penetrating its thicknessdirection at its predetermined position, said first ferromagnetic layerand said second ferromagnetic layer being electrically connected to eachother via said through hole, and said through hole having an openingwidth not larger than 20 nm.

[0014] According to yet another embodiment of the invention, there isprovided a magnetic memory comprising: magnetoresistance effect elementincluding: a first ferromagnetic layer being pinned in magnetization ina first direction; an insulating layer overlying said firstferromagnetic layer; a second ferromagnetic layer overlying saidinsulating layer, said second ferromagnetic layer being free indirection of magnetization, and at least one of a reading and a writingbeing executable by flowing a current in a direction of its layerthickness; a nonmagnetic intermediate layer overlying said secondferromagnetic layer; and a third ferromagnetic layer overlying saidnonmagnetic intermediate layer and being pinned in magnetization in saidfirst direction, said insulating layer having a through hole penetratingits thickness direction at its predetermined position, said firstferromagnetic layer and said second ferromagnetic layer beingelectrically connected to each other via said through hole, and saidthrough hole having an opening width not larger than 20 nm.

[0015] According to yet another embodiment of the invention, there isprovided a magnetic memory comprising a magnetoresistance effect elementincluding: a first ferromagnetic layer; an insulating layer overlyingsaid first ferromagnetic layer; and a second ferromagnetic layeroverlying said insulating layer, said insulating layer having a throughhole penetrating its thickness direction at its predetermined position,said first ferromagnetic layer and said second ferromagnetic layer beingelectrically connected to each other via said through hole, and saidthrough hole having an opening width not larger than 20 nm, one of saidfirst and second ferromagnetic layers being pinned in magnetization in afirst direction, another of said first and second ferromagnetic layersbeing free in direction of magnetization and at least one of reading andwriting being executable by flowing a current in a direction ofthicknesses of said first and second ferromagnetic layers.

[0016] According to yet another embodiment of the invention, there isprovided a magnetic memory comprising a plurality of memory cells, saidmemory cells being two-dimensionally arranged, each of said memory cellsbeing separated each other by insulating region, a current beingprovided to each of said memory cells by a conductive prove or fixedwiring, an absolute value of a writing current provided to each of saidmemory cells being larger than an absolute value of a reading currentprovided to each of said memory cells, and each of said memory cellshaving a magnetoresistance effect element including: a firstferromagnetic layer; an insulating layer overlying said firstferromagnetic layer; and a second ferromagnetic layer overlying saidinsulating layer, said insulating layer having a through holepenetrating its thickness direction at its predetermined position, saidfirst ferromagnetic layer and said second ferromagnetic layer beingelectrically connected to each other via said through hole, and saidthrough hole having an opening width not larger than 20 nm, one of saidfirst and second ferromagnetic layers being pinned in magnetization in afirst direction, another of said first and second ferromagnetic layersbeing free in direction of magnetization and said writing current andsaid reading current being provided in a direction of thicknesses ofsaid first and second ferromagnetic layers.

[0017] In this specification, “magnetoresistance ratio” is defined to bea division of a change in electrical resistance divided by electricalresistance. That is, magnetoresistance ratio is obtained by dividing achange in electrical resistance by the electrical resistance at themagnetic field. In case where the magnetization is unsaturated under theinsufficient magnetic field, the magnetoresistance ratio is obtained bydividing the electrical resistance change by the smallest resistance ofthe MR element.

[0018] Also in this specification, “resistance between a firstferromagnetic layer and a second ferromagnetic layer” is defined as anaverage. That is, let the maximum resistance between the first andsecond ferromagnetic layers be Rmax, and the minimum resistancetherebetween be Rmin, “resistance between a first ferromagnetic layerand a second ferromagnetic layer” is defined as the average of thesevalues which equals to (Rmax+Rmin)/2.

BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The present invention will be understood more fully from thedetailed description given herebelow and from the accompanying drawingsof the embodiments of the invention. However, the drawings are notintended to imply limitation of the invention to a specific embodiment,but are for explanation and understanding only.

[0020] In the drawings:

[0021]FIGS. 1A and 1B are diagrams that roughly illustratecross-sectional structures of substantial parts of magnetoresistanceeffect elements according to an embodiment of the invention;

[0022]FIGS. 2A through 2D are schematic diagrams for explaining arelation between an applied magnetic field and the electric resistance;

[0023]FIGS. 3A and 3B are schematic diagrams for explaining changes ofmagnetoresistance by a typical anisotropic magnetoresistive effect;

[0024]FIGS. 4A through 4F are diagrams that roughly show properties ofmagnetoresistance effect elements according to an embodiment of theinvention in comparison with properties of conventionalmagnetoresistance effect elements;

[0025]FIGS. 5A through 5D are diagrams that roughly illustratemagnetoresistance effect elements having a plurality of nanocontacts;

[0026]FIGS. 6A through 6C are diagrams roughly illustratingcross-sectional forms of openings of nanocontacts;

[0027]FIGS. 7A and 7B are diagrams that roughly illustratemagnetoresistance effect elements each locating a region D added with adifferent kind of element near the opening end of a nanocontact A;

[0028]FIGS. 8A through D are cross-sectional views of the substantialpart of a magnetoresistance effect element according to an embodiment ofthe invention under a manufacturing process;

[0029]FIG. 9 is a cross-sectional view of a structure having anarrangement of a plurality of magnetoresistance effect elements on acommon substrate (not shown);

[0030]FIGS. 10A through 10C are diagrams that roughly show specificexamples using magnetoresistance effect elements according to anembodiment of the invention as magnetic reproducing elements;

[0031]FIGS. 11A and 11B are diagrams that roughly show other specificexamples using magnetoresistance effect elements according to anembodiment of the invention as magnetic reproducing elements;

[0032]FIG. 12 is a schematic diagram roughly illustrating across-sectional structure of the substantial part of a magnetic memorydevice using magnetoresistance effect elements according to anembodiment of the invention;

[0033]FIGS. 13A through 13C are diagrams roughly illustrating accessmeans to individual recording/reproducing cells 10;

[0034]FIGS. 14A through 14D are diagrams that roughly showcross-sectional structures of magnetoresistance effect elements 10 thatare used in the magnetic memory device of FIG. 12;

[0035]FIGS. 15A through 15H are diagrams roughly showing cross-sectionalstructures of magnetoresistance effect elements 10 that are used in themagnetic memory device of FIG. 12;

[0036]FIGS. 16A through 16E are cross-sectional views that roughly showother specific examples of magnetoresistance effect element usable inthe magnetic memory device of FIG. 12;

[0037]FIGS. 17A and 17B are graph diagrams that show changes in distancebetween the top surface of a ferromagnetic layer 1 and the tip portionof a needle 110 and changes in current flowing between them,respectively, with time, when the needle 110 is thrust at a constantspeed;

[0038]FIG. 18 is a graph diagram showing a relation between appliedmagnetic field and electrical resistance in a magnetoresistance effectelement according to an embodiment of the invention;

[0039]FIG. 19 is a diagram roughly showing a cross-sectional structureof the substantial part of a magnetoresistance effect elementexperimentally prepared as the fourth example of the invention;

[0040]FIG. 20 is a diagram roughly showing a cross-sectional structureof the substantial part of a magnetoresistance effect elementexperimentally prepared in an embodiment of the invention;

[0041]FIG. 21 is a diagram roughly showing a cross-sectional structureof the substantial part of a magnetoresistance effect element preparedin an example of the invention;

[0042]FIG. 22 is a graph diagram showing changes of magnetoresistance ofa magnetoresistance effect element according to an example of theinvention;

[0043]FIG. 23 is a diagram roughly showing a cross-sectional structureof an element formed in the seventh example of the invention, viewedfrom a medium 200;

[0044]FIG. 24 is a diagram roughly showing an array connection of aplurality of probes via transistors TR;

[0045]FIGS. 25A through 25C are diagrams roughly showing plan-viewedconfigurations of a SiO₂ layer 3 that changes with growth time;

[0046]FIG. 26 is a graph diagram showing growth time of a SiO₂ layer onthe abscissa and MR ratio on the ordinate;

[0047]FIG. 27 is a diagram roughly illustrating a method used in thetenth example of the invention;

[0048]FIG. 28 is a diagram roughly showing a process of fabricating amagnetoresistance effect element;

[0049]FIG. 29 is a diagram roughly showing an example of forming a Nbfilm 400;

[0050]FIGS. 30A through 30C are cross-sectional views roughly showing aprocess of forming a nanocontact;

[0051]FIGS. 31A through 31C are cross-sectional views roughly showingcontinuous part of the process shown in FIGS. 30A through 30C;

[0052]FIGS. 32A through 32C are cross-sectional views roughly showinganother process of forming a nanocontact;

[0053]FIG. 33 is a diagram roughly showing an aspect of with obliqueangle of incidence;

[0054]FIGS. 34A through 34C are cross-sectional views roughly showing amanufacturing process of a magnetoresistance effect element taken as anexample of the invention;

[0055]FIGS. 35A through 35C are cross-sectional views roughly showing amanufacturing process of a magnetoresistance effect element taken asanother example of the invention;

[0056]FIGS. 36A through 36C are cross-sectional views roughly showing amanufacturing process of a magnetoresistance effect element taken asanother example of the invention;

[0057]FIGS. 37A through 37C are cross-sectional views roughly showing amanufacturing process of a magnetoresistance effect element taken asanother example of the invention;

[0058]FIGS. 38A through 38C are diagrams roughly showing differentresults of spot irradiation of electron beams;

[0059]FIG. 39 is a diagram roughly illustrating the position for EBirradiation relative to the device center C;

[0060]FIG. 40 is a diagram that roughly illustrates configuration of adevice;

[0061]FIGS. 41A and 41B are diagrams that roughly show a process oflocal annealing;

[0062]FIG. 42 is a diagram roughly illustrating MR element having somegrowth axes;

[0063]FIGS. 43A and 43B are diagrams roughly showing a process ofuniforming orientation of crystal grains;

[0064]FIGS. 44A and 44B are cross-sectional views roughly showing anannealing process inserted in the film-stacking process;

[0065]FIGS. 45A and 45B are cross-sectional views roughly showing anannealing process executed after the film-stacking process;

[0066]FIGS. 46A and 46B are cross-sectional views roughly showing aprocess of removing damage produced in the boring process;

[0067]FIGS. 47A and 47B are cross-sectional views roughly illustrating amethod of making micro through holes;

[0068]FIGS. 48A and 48B are cross-sectional views roughly showing amethod of preventing over-etching;

[0069]FIGS. 49A through 49C are cross-sectional views roughly showing aprocess of making a micro through hole by sequentially using differentways of etching;

[0070]FIGS. 50A through 50C are cross-sectional views roughly showing atechnique for minimizing unintended removal of the insulting layer;

[0071]FIGS. 51A through 51C are cross-sectional views roughly showing atechnique using FIB;

[0072]FIG. 52 is a diagram roughly showing a model using a spacer layer;

[0073]FIGS. 53A through 54D are diagrams roughly showing a process takenas a further example;

[0074]FIG. 55 is a schematic diagram for explaining a process usingreducing reaction, taken as a further example;

[0075]FIG. 56 is a diagram roughly showing an alternative of the processshown in FIG. 55;

[0076]FIG. 57 is a diagram roughly showing another process usingreduction;

[0077]FIGS. 58A and 58B are rough diagrams for explaining a processusing oxidation;

[0078]FIG. 59A is a diagram roughly showing a structure including aspacer layer to explain functions of the spacer layer;

[0079]FIG. 59B is a diagram roughly showing an aspect of the spacerlayer partly removed by etching;

[0080]FIG. 59C is a diagram roughly showing an aspect of the spacerlayer partly removed by etching;

[0081]FIG. 60 is a diagram roughly showing an aspect of the upper spacerlayer 4 and the upper magnetic layer 2 stacked;

[0082]FIGS. 61A through 61C are diagrams roughly showing a process ofburying the contact through hole with a magnetic material;

[0083]FIG. 62 is a diagram roughly showing a magnetoresistance effectelement in which electricity is applied in parallel to the film plane;

[0084]FIGS. 63A through 63D are diagrams roughly illustrating a processof fabricating the magnetoresistance effect element shown in FIG. 62;

[0085]FIG. 64 is a diagram roughly showing a rounded shape of themagnetic layer in relation with the beam profile;

[0086]FIG. 65 is a diagram roughly showing a process using a protectivefilm PF;

[0087]FIG. 66 is a diagram roughly showing a process additionally usinga photo resist; and

[0088]FIG. 67 is a diagram roughly showing a process capable ofsubstantially narrowing a contact.

DETAILED DESCRIPTION

[0089] Some embodiments of the invention will now be explained belowwith reference to the drawings.

[0090]FIGS. 1A and 1B are schematic diagrams that illustratecross-sectional structures of substantial parts of magnetoresistanceeffect elements according to an embodiment of the invention.

[0091] In the magnetoresistance effect element according to thisembodiment, an insulating layer 3 having a micro through hole A isformed on a first ferromagnetic layer 1, either directly or indirectly,on a substrate S, and a second ferromagnetic layer 2 is formed to burythe micro through hole A.

[0092] Opening width of the micro through hole A is preferably notlarger than 20 nm at the narrowest portion as explained later in greaterdetail. If the opening shape of the micro through hole A is circular,the “opening width” means its diameter. If polygonal, it means thelongest of its diagonals. If it has an isometric shape such as a flatcircle, it means the longest of its opening widths.

[0093] The insulating layer 3 has a through hole of a conical, circular,pyramidal, columnar or prismatic shape, or any other appropriate shape,toward the fist ferromagnetic layer 1, and a part of the through hole Aforms the micro through hole A. In one of preferred embodiments of theinvention, the micro through hole A is located near the firstferromagnetic layer.

[0094] That is, the magnetoresistance effect element shown here has amagnetic nanocontact that binges the first ferromagnetic layer 1 and thesecond ferromagnetic layer 2 into contact at the micro through hole A.

[0095] Further, the ferromagnetic layers 1, 2 function as electrodes, orelectrodes are provided separately and connected to them. The electricresistance obtained between the ferromagnetic layers 1, 2 by applicationof a current between the electrodes is characterized in changing withregard to the relative magnetization arrangement.

[0096] That is, when the opening width of the magnetic nanocontactformed at the micro through hole A decreases to 20 nm or less, thethrough hole functions as a generating point of an ultra-thin magneticwall. Then, the relative magnetic arrangement between the ferromagneticlayers 1 and 2 can be changed by applying an external magnetic field toeither one of the ferromagnetic layers 1 and 2, and this change cause achange in the electric resistance between the first and secondferromagnetic layers 1 and 2.

[0097] In case of the magnetoresistance effect element shown here, theelectric resistance basically decreases with the magnetic field in bothmagnetic direction at certain magnetic field range. Therefore, themagnetoresistive effect generated here can be regarded to be amagnetoresistive effect generated by the magnetic wall formed at theportion of the nanocontact. This magnetic wall functions as a transitionregion of two portions having a different magnetization direction eachother. In this magnetoresistance effect element, magnetoresistive effectas large as 20% or more is generated depending on the magnitude of theapplied magnetic field.

[0098]FIGS. 2A through 2D are schematic diagrams for explaining arelation between an applied magnetic field and the electric resistance.FIGS. 2A and 2C are graph diagrams that demonstrate changes of electricresistance obtained by applying a magnetic field in parallel to the filmplane of the ferromagnetic layer 1 or 2 when the opening width of themicro through hole A, i.e. magnetic nanocontact, is 20 nm or less.Similarly, FIGS. 2B and 2D are graph diagrams that demonstrate changesof electric resistance obtained by applying a magnetic fieldperpendicularly to the film plane of the ferromagnetic layer 1 or 2 whenthe opening width of the micro through hole A is 20 nm or less. FIGS. 2Athrough 2D are shown for the most simple basic structure which does notinclude an exchange bias film. Also these figures show the case wherethe easy axis of magnetization of the element lies in parallel to thefilm plane.

[0099] As apparent from these graph diagrams, when the opening width ofthe micro through hole A is 20 nm or less, in certain range of themagnetic field, electric resistance basically decreases with the appliedmagnetic field irrespectively of the direction of magnetic field. Incase where the magnetic field is applied in a direction of a hard axisof magnetization, the resistance decrease may not be definite becausethe change is very small.

[0100] When the opening width of the magnetic nanocontact becomes largerthan 20 nm, magnetoresistive effect by ordinary anisotropicmagnetoresistance effect becomes noticeable. That is, electricresistance varies in accordance with the direction of the magnetic fieldapplied.

[0101]FIGS. 3A and 3B are schematic diagrams for explaining changes ofmagnetoresistance by a typical anisotropic magnetoresistive effect. Incase of anisotropic magnetoresistance effect, if the magnetic field isapplied perpendicularly relative to the current, that is, in parallel tothe film plane of the ferromagnetic layer 1 or 2, electric resistanceslightly decreases due to application of the magnetic field as shown inFIG. 3A.

[0102] If the magnetic field is applied in parallel to the current, i.e.perpendicular to the film plane of the ferromagnetic layer 1 or 2,magnetization is reluctant to saturate with respect to the magneticfield, and as shown in FIG. 3B, although the gradient of the magneticfield is small, electric resistance rises in response to application ofthe magnetic field. However, as appreciated from FIGS. 3A and 3B, incase the element exhibits ordinary anisotropic magnetoresistive effect,the magnetoresistance ratio hits the peak at several %.

[0103] In contrast, in the magnetoresistance effect element according tothe embodiment of the invention, electric resistance largely changeswith regard to the magnetic field in certain direction of the magneticfield applied as shown in FIGS. 2A through 2D, and moreover, themagnetoresistance ratio is remarkably large.

[0104] Explained below is why the magnetoresistance effect elementaccording to the embodiment of the invention exhibits such a largermagnetoresistance ratio than conventional magnetoresistance effectelements.

[0105]FIGS. 4A through 4F are diagrams that show properties ofmagnetoresistance effect elements according to the embodiment of theinvention in comparison with properties of conventionalmagnetoresistance effect elements.

[0106]FIGS. 4A through 4F contain schematic diagrams of elementstogether with indication of magnetization directions in upper parts, andcorresponding potential diagrams in lower parts. FIGS. 4A and 4B arethose of CPP type magnetoresistance effect elements, FIGS. 4C and 4D arethose of magnetoresistance effect elements having nanocontacts accordingto embodiments of the invention, and FIGS. 4E and 4F are those ofmagnetoresistance effect elements not having nanocontacts, for parallelmagnetization arrangement and anti-parallel magnetization arrangement.

[0107] Using these schematic drawings, explanation is made below aboutcases where electrons are flown from the ferromagnetic layer 1 to theferromagnetic layer 2.

[0108] In case of CPP-MR shown in FIGS. 4A and 4B, an intermediate layer40 between the ferromagnetic layers 1 and 2 is made of a nonmagneticmaterial such as copper (Cu). That is, the CPP type MR elements eachhave a multi-layered structure of cobalt (Co)/copper (Cu)/cobalt (Co).In these CPP type MR elements, if directions of magnetization M areparallel between the ferromagnetic layer 1 and that of the ferromagneticlayer 2 as shown in FIG. 4A, up-spin electrons flow from theferromagnetic layer 1 via the intermediate layer 40 into theferromagnetic layer 2. If directions of magnetization M areanti-parallel between the ferromagnetic layers 1 and 2 as shown in FIG.4B, up-spin electrons having revived without being scattered uponpassing the intermediate layer 40 from the ferromagnetic layer 1 movetoward the ferromagnetic layer 2 and are scattered in the ferromagneticlayer 2.

[0109] In case of MR elements according to the embodiment of theinvention, if directions of magnetization M are parallel as shown inFIG. 4C, up-spin electrons and downspin electrons directly flow from theferromagnetic layer to the ferromagnetic layer 2. If directions ofmagnetization M are anti-parallel as shown in FIG. 4D, a very thinmagnetic wall is formed at the portion of the nanocontact, anddirections of magnetization M rapidly change (in FIG. 4D, thickness ofthe magnetic wall is equivalent to thickness of the drawing line, forexample). Therefore, up-spin electrons are scattered in theferromagnetic layer 2, and downspin electrons are also scattered in theferromagnetic layer 2. As such, in case of the MR element according tothe embodiment, since both up-spin and down-spin electrons arescattered, magnetoresistive effect larger than those of CPP-MR elementsshown in FIGS. 4A and 4B can be obtained.

[0110] As will be explained later in detail, the inventors have foundthat a large magnetoresistance effect could be obtained in case where anadditive element is introduced into the connecting portion at thethrough hole. In this case, since the thickness of the layer where theadditive element is incorporated is very small, the existence of theadditive element can be neglected in the above-explained mechanism shownin FIGS. 4C and 4D.

[0111] On the other hand, in case the nanocontact is sized as large asexceeding 20 nm, if directions of magnetization M are anti-parallel, themagnetic wall between them becomes very thick, and makes it difficultfor electrons to hold spin information even after passing therethrough.As a result, it becomes difficult to obtain the magnetoresistive effectderived from the change in direction of magnetization M.

[0112] This is the reason why the magnetoresistance effect elementaccording to the embodiment of the invention exhibits a very largemagnetoresistance ratio.

[0113] In the embodiment of the invention, since a multi-layeredstructure is used as the element structure for easier control ofmagnetization M of the ferromagnetic layers 1, 2, the state ofmagnetization shown in FIG. 4D can be realized easily.

[0114] Consequently, although the magnetoresistance effect elementaccording to the embodiment of the invention decreases in electricresistance upon application of a magnetic field, if any hysteresisexists, the resistance maximum may slightly shift from the zero magneticfield as shown in FIG. 2A. Alternatively, the resistance may drop whenthe magnetic field is around zero. In both cases, once the resistancemaximum is exceeded by applying the magnetic field, the electricresistance decreases until all directions of magnetization of theelement are aligned in parallel by further application of a magneticfield.

[0115] Turning back to FIGS. 1A and 1B, in the magnetoresistance effectelement according to the embodiment of the invention, the ferromagneticlayers 1 and 2 sandwiching the nanocontact have a film-like plane foreasier control of the magnetic domain. In this manner, it is possible touniform the magnetization distribution profile, thereby sharply keep thewidth of the magnetic wall between this and the other ferromagneticlayers connected at the nanocontact, and accordingly obtain a largemagnetoresistance ratio.

[0116] However, the ferromagnetic layer 1 and he insulating layer 3 needno be strictly flat layer, but may have small undulations or curves asshown in FIG. 1B.

[0117] Furthermore, in the embodiment of the invention, a plurality ofnanocontacts may be provided as shown in FIGS. 5A through 5D. When aplurality of nanocontacts are used, although MR value decreases,“fluctuation” of MR value among elements can be reduced as compared withthe model having a single nanocontact, and stable MR characteristics canbe reproduced easily.

[0118] The opening configuration of each nanocontact may be bowl-shapedas shown in FIGS. 5A and 5B, or may define spherical convex formed onthe flat ferromagnetic layer 1 as shown in FIG. 6A. Alternatively, itmay be a vertical wall surface as shown in FIG. 6B. Alternatively, asshown in FIG. 6C, it may define spherical surfaces convex into bothferromagnetic surfaces 1 and 2.

[0119] The insulating layer 3 encircling the magnetic nanocontact may bemade of a polymer, or an oxide, nitride or fluoride containing at leastone element among aluminum (Al), titanium (Ti), tantalum (Ta), cobalt(Co), nickel (Ni), silicon (Si), iron (Fe), zirconium (Zr) and hafnium(Hf). Alternatively, the insulating layer 3 may be made of a compoundsemiconductor having a high resistance such as aluminum arsenide (AlAs).

[0120] The ferromagnetic layers 1, 2 may be made of a soft-magneticmaterial such as an element among iron (Fe), cobalt (Co), nickel (Ni),etc., an alloy containing at least one element among iron (Fe), cobalt(Co), nickel (Ni), manganese (Mn) and chromium (Cr), a NiZr-family alloycalled “Permalloy”, a CoNbZr-family alloy, a FeTaC-family alloy, aCoTaZr-family alloy, a FeAlSi-family alloy, a FeB-family alloy, aCoFeB-family alloy, or the like, or a half-metal magnetic material suchas a Heusler alloy, CrO₂, Fe₃O₄, or La_(1-x)Sr_(x)MnO₃. Alternatively,the ferromagnetic layers 1, 2 may be made of a compound semiconductor oroxide semiconductor containing at least one magnetic element among iron(Fe), cobalt (Co), nickel (Ni), manganese (Mn) and chromium (Cr), suchas (Ga, Cr)N, (Ga, Mn)N, MnAs, CrAs, (Ga, Cr)As, Zn O:Fe, (Mg, Fe). Anyof these materials having a magnetic property suitable for the intendeduse may be selected.

[0121] The ferromagnetic layer 1 and 2 may be made of a single film, ormay have a multi-layered structure including a plurality offerromagnetic layers. For example, the soft magnetic layer may have adual film structure including CoFe layer and permalloy layer. As such,an appropriate combination of various films may be selected with regardto the each application.

[0122] The ferromagnetic layer 1 and 2 may be made of the same materialor different materials.

[0123] When an anti-ferromagnetic layer or a multi-layered film ofnonmagnetic layer/ferromagnetic layer/anti-ferromagnetic layer may beadditionally provided adjacent to the ferromagnetic layer 1 or 2 to fixthe direction of magnetization of the ferromagnetic layer 1 or 2 and tocontrol the response property of the magnetoresistance effect elementrelative to the magnetic field. As the anti-ferromagnetic material forthis purpose, FeMn, PtMn, PdMn, PdPtMn, or the like, are useful.

[0124] To obtain a desired value by controlling the element resistance,it is useful to place a slight amount of conductor or semiconductor, ora different kind of element having the nature of an insulator, near theopening portion of the nanocontact.

[0125]FIGS. 7A and 7B are schematic diagrams that illustrate suchmagnetoresistance effect elements. In these specific examples, a regionD containing an additive element of a different kind is provided nearthe opening end of the micro through hole A. In this case, themagnetoresistance ratio may be sacrificed more or less; however, theresistance can be adjusted to a value the system using themagnetoresistance effect element requires. The region D including theadditive element may be formed in a layer. In this case, the thicknessof the layer D at the through hole A may preferably be in a range largerthan zero atomic layer and not larger than ten atomic layers.

[0126] By incorporating such an additive element, the exchange couplingbetween the ferromagnetic layers 1 and 2 can be cut off, and it becomeseasy to control the magnetic domain structure. Further, by adding suchan additive element, the substantial size of the through hole A may bereduced and the magnetoresistance effect obtained with the nanocontactmay become more efficient.

[0127] As the additive element, either one of noble metals, oxides,complex compounds including oxide, or other elements which act asso-called “surfactant” for the growth of magnetic layer can be used.

[0128] As the noble metal, such as copper (Cu), gold (Au) or silver (Ag)may be used. As the oxide, such as Ni—O, Fe—O, Co—O, Co—Fe—O, Ni—Fe—O,Ni—Fe—Co—O, Al—O or Cu—O may be used. As the complex compound, such asAl—Cu—O may be used. As the surfactant, antimony (Sb) or tin (Sn) may beused.

[0129] The magnetoresistance effect element according to the embodimentof the invention can be easily manufactured and reliably formed into adevice as compared with conventional magnetoresistance effect elementsusing nanocontacts. A method of producing the magnetoresistance effectelement according to the embodiment of the invention will be explainedbelow.

[0130]FIGS. 8A through D are cross-sectional views of the substantialpart of a magnetoresistance effect element according to the embodimentof the invention under a manufacturing process.

[0131] First referring to FIG. 8A, the ferromagnetic layer 1 is formedon a substrate (not shown) directly or indirectly via a single layersuch as a buffer layer or a plurality of such layers, not shown, and theinsulating layer 3 is formed thereon. The insulating layer 3 may beformed by deposition or precipitation of a different kind of material onthe ferromagnetic layer 1, or by changing the nature of the surfacelayer of the ferromagnetic layer 1 by oxidation, nitrification orfluoridation, for example.

[0132] Next as shown in FIGS. 8B and 8C, an electrically conductiveneedle 110 having a tip in form of a ball with a curvature radius in therange from 5 to 1000 nm, cone or pyramid is brought into contact, and apressure is applied to form the micro through hole A in the insulatinglayer 3. In this process, a predetermined voltage is applied to aconductive wire 120 formed between the needle 110 and the magneticlayer, and the needle 110 is thrust until the current flowing in theconductive wire 120 reaches a predetermined value. That is, bymonitoring the current flowing between the needle 110 and theferromagnetic layer 1 upon thrusting the needle 110 into the insulatinglayer 3, the opening width of the micro through hole A is controlled.When the current reaches the predetermined value, the needle 110 ismoved back to the opposite direction and removed out of the surface ofthe insulating layer 3.

[0133] The needle 110 is driven by a distance-changing functionalportion 130A (130B) as shown in FIGS. 8B and 8C. The distance-changingfunctional portion 130 functions to move the needle 110 vertically ofthe sample surface. For this purpose, there is the method of curving anarm as shown in FIG. 8B, or the method of moving it vertically as shownin FIG. 8C, for example.

[0134] In case of the curving method shown in FIG. 8B, the needle 110 isattached to an arm 140 extending in parallel to the sample surface, andthe distance-changing functional portion 130A located on and under thearm 140 is expanded or contracted to curve the arm 140, thus the heightof the needle 110 can be changed. The distance-changing functionalportion 130A may be a film that thermally expands upon a temperaturechange caused by heating with electricity. When such heating withelectricity is employed, an appropriate insulator is required betweenthe distance-changing functional portion 130 and the arm 140.

[0135] In case of the vertical movement method shown in FIG. 8C, adistance-changing functional portion 130B such as a piezo element may beformed above the needle 110 such that the position of the needle 110 canbe controlled by the voltage applied to the piezo element.

[0136] Alternatively, a piezo element can be used as thedistance-changing functional portion 130A shown in FIG. 8B. In thiscase, the curving of the arm 140 is controlled by applying a voltage tothe piezo element.

[0137] The through hole formed by using such a mechanism capable ofcontrolling the minute distance basically has a predetermined diameterat the narrowest portion, and defines spherical, conical, pyramidal, orother configuration copying the needle 110.

[0138] In this manner, the micro through hole for obtaining desiredconductance is finally formed at the tip of the through hole shapedconical, circular or pyramidal in accordance with the tip configurationof the needle 110.

[0139] In the next step, as shown in FIG. 8D, the ferromagnetic layer 2is deposited toward the through hole. As a result, the ferromagneticlayers 1 and 2 connect to each other with small conductance at thedesired micro through hole A. Thereafter, annealing may be carried outif necessary. When the magnetoresistance effect element thus formed isused, electrodes are provided for respective ferromagnetic layers toenable their powering.

[0140] Through the method explained above, the magnetic nanocontactexcellent in reproducibility and controllability is formed between theferromagnetic layers 1, 2. Typical values of the voltage applied uponthrusting the needle 110 are in the range of 0.01 through 10 V, thepredetermined current range is from 0.05 μA to 100 mA, and the minimumopening width of the conical, circular or pyramidal through hole of theinsulator is in the range fro, 0.1 to 50 nm. Especially, the openingwidth of the micro through hole is preferably limited within 0.1 to 20nm.

[0141] Material used for the needle 110 is preferably harder than theinsulating layer 3 and electrically conductive. For example, conductivediamond, hard metal or silicon (Si) with or without coating ofconductive diamond may be used.

[0142] The insulating layer 3 prior to formation of the magneticnanocontact is preferably as thin as possible within the range ensuringthe function as the insulating layer 3. More specifically, the rangefrom 0.5 to 50 nm is preferable. Thickness of the ferromagnetic layer 1and 2 may be determined appropriately depending upon the intended use.The ferromagnetic layer 1 may be a sufficiently thick bulk-shaped layer.

[0143] According to the embodiment of the invention, as shown in FIG. 9,the structure having an array of a plurality of magnetoresistance effectelements on a common substrate (not shown) can be easily formed. Thiskind of structure is applicable to, for example, a patterned medium thatwill be explained later in greater detail.

[0144] The magnetoresistance effect element according to the embodimentof the invention has the structure ready for making a device, and it istherefore employable for various purposes of use.

[0145] First, the magnetoresistance effect element can be used as areproducing element in a magnetic recording system. Since the use of themagnetoresistance effect element according to the embodiment ensures amagnetoresistance ratio as large as 20% or more, high reproductionsensitivity can be obtained.

[0146]FIGS. 10A through 10C are schematic diagrams that show specificexamples using magnetoresistance effect elements according to theembodiment of the invention as magnetic reproducing elements.

[0147] In case of the specific example shown in FIG. 10A, theferromagnetic layer 2, insulating layer 3 and ferromagnetic layer 1 ofthe magnetoresistance effect element serially appear on the path of themagnetic flux released from the surface of the magnetic recording medium200 such that difference between directions of magnetization of theferromagnetic layers 1, 2 opposed to each other via the magneticnanocontact formed at the micro through hole A can be detected as achange of magnetoresistance. In this case, as illustrated here,directions of magnetization of these two ferromagnetic layers 1, 2 arepreferably put under domain control, if necessary.

[0148] In case of the specific example shown in FIG. 10B, theferromagnetic layer 2, insulating layer 3 and ferromagnetic layer 1 ofthe magnetoresistance effect element serially appear in theperpendicular direction relative to the top surface of the magneticrecording medium within the range of error angle about plus and minus 20degrees. Here again, difference between directions of magnetization ofthe ferromagnetic layers 1, 2 opposed to each other via the magneticnanocontact formed at the micro through hole A can be detected as achange of magnetoresistance.

[0149] In this case, magnetization M of the ferromagnetic layer 1remoter from the recording medium 200 is preferably pinned in adirection within plus and minus 20 degrees from the perpendiculardirection relative to the top surface of the recording medium 200. Forpinning the magnetization, a method of introducing a strong shapemagnetic anisotropy, a method of providing an anti-ferromagnetic layernext to it and introducing unidirectional anisotropy, or the like, maybe employed.

[0150] Direction of magnetization M of the ferromagnetic layer 2 nearerto the recording medium 200 is designed to be switchable by the magneticflux from the medium 200. In this manner, a signal from the recordingmedium 200 can be detected from the angle made by the ferromagneticlayers 1, 2 and magnetization M.

[0151] When the magnetoresistance effect element according to theembodiment is used, high sensitivity is obtained, and the surfaceopposed to the recording medium 200 can be readily formed and processedbecause distance from the medium 200 to the magnetic nanocontact A canbe determined basically by adjusting the thickness of the ferromagneticlayer 2. When the medium-opposed surface opposed to the recording medium200 is easy to process, it is also possible to locate the ferromagneticlayer 1 nearer to the recording medium 200 as shown in FIG. 10C.

[0152]FIGS. 11A and 11B are schematic diagrams that show other specificexamples using magnetoresistance effect elements according to anembodiment of the invention as magnetic reproducing elements. In thesespecific examples shown here, the film surface of the magnetoresistanceeffect element is oriented perpendicularly to the medium 200. The microthrough hole A is out of a center of symmetry in a major plane of theinsulating layer 3 toward the medium 200. Since the signal magneticfield becomes larger as the distance from the medium decreases, thisstructure is advantageous for increasing the detection efficiency of themagnetic field of the free layer 2.

[0153] The ferromagnetic layer 2 serving as a magnetization sensitivelayer (free layer) may be a single layer as shown in FIG. 11A, or atwo-layered film as shown in FIG. 11B. In case of the specific exampleshown in FIGS. 11A, the ferromagnetic layer 1 forms a “pinned layer”pinned in direction of magnetization. The ferromagnetic layer (pinnedlayer) 1 may be a multi-layered structure stacking, sequentially fromthe nearest to the micro through hole A, a magnetic layer and ananti-ferromagnetic layer, or a magnetic layer, nonmagnetic layer,magnetic layer and anti-ferromagnetic layer. In FIG. 11A, the stackedstructure is sandwiched by a pair of magnetic shields SH.

[0154] In case of the specific example of FIG. 11B, the ferromagneticlayer (pinned layer) 1 may be a multi-layered structure of ferromagneticlayer/anti-ferromagnetic layer/ferromagnetic layer. The ferromagneticlayer 1 may also be a multi-layered structure of ferromagneticlayer/nonmagnetic layer/ferromagnetic layer/anti-ferromagneticlayer/ferromagnetic layer/nonmagnetic layer/ferromagnetic layer.

[0155] As shown in FIG. 11B, free layers 2A and 2B are provided throughthe through hole A at opposite sides of pinned layer 1. These freelayers 2A and 2B senses the magnetic signals respectively from therecording medium 200. As shown in FIG. 11C, when the magnetic signalsfor the free layers 2A and 2B are both upward, the resistance change A Rbecomes zero since the magnetization direction of the free layers 2A and2B are same as the magnetization direction of the pinned layer 1. Incontrast, when the magnetic signals for the free layers 2A and 2B areboth downward, the resistance change A R becomes 2 (in arbitrary unit)since spin scattering occurs between pinned layer 1 and free layer 2Aand between pinned layer 1 and free layer 2B, respectively.

[0156] When one of the magnetic signals for the free layers 2A and 2B isdownward and another is upward, the resistance change ΔR becomes 1 (inarbitrary unit) since spin scattering occurs only between pinned layer 1and free layer 2A or between pinned layer 1 and free layer 2B.

[0157] Thus, as shown in FIG. 11C, the each case can be distinguished bymonitoring the resistance change ΔR.

[0158] Therefore, by providing a plurality of free layers, amulti-valued (more than two) resistance change can be realized. In thecase of nanocontact MR element according to the embodiment, it becomeseasy to realize such a multi-valued recording/reproducing since aresistance change more than 100% can be possible.

[0159] The magnetoresistance effect element according to the embodimentis applicable to a so-called “patterned medium”. That is, the structurehaving an array of a plurality of magnetoresistance effect elements asshown in FIG. 9 can be made easily. One of such applications is amagnetic memory device. Another of such applications is a recordingmedium for a probe-storage system.

[0160]FIG. 12 is a schematic diagram illustrating a cross-sectionalstructure of the substantial part of a magnetic memory device usingmagnetoresistance effect elements according to an embodiment of theinvention.

[0161] As illustrated, the magnetic memory device according to theembodiment of the invention has the structure including a parallelalignment of a plurality of magnetoresistance effect elements 10 on anelectrode layer 20. The magnetoresistance effect elements areelectrically isolated from each other by an insulating layer 30, andeach has the role as a recording/reproducing cell.

[0162] To access to each recording/reproducing cell 10, a conductiveprobe PR as an upper electrode may be used as shown in FIG. 13A, or afixed wiring WR may be used as shown in FIG. 13B. In the model using thefixed wiring WR, it contacts the cell 10. However, in the model usingthe conductive probe PR, it may be either contacted or uncontacted withthe cell 10. In case the probe PR does not contact the cell, a tunnelingcurrent flowing between it and the cell 10 enables probing.

[0163]FIGS. 14A through 15H are schematic diagrams that showcross-sectional structures of magnetoresistance effect elements 10 thatcan be used in the magnetic memory device of FIG. 12. Any of themagnetoresistance effect element of FIGS. 14A through 14D and those ofFIGS. 15A through 15H has a structure forming a magnetic layer on thesecond ferromagnetic layer 2 via a nonmagnetic layer 4. Further, a pairof electrodes are connected to both sides of the stacked structure. Eachmagnetoresistance effect element functions for both recording andreproduction. That is, recording is enabled by supplying a current of apredetermined magnitude to the magnetoresistance effect element in apredetermined direction, and a signal of the cell can be read from aresistance value measured by supplying a weaker current.

[0164] The cell shown in FIG. 14A has a structure in which a nonmagneticintermediate layer 4 and a ferromagnetic layer 5 are stacked on thesecond ferromagnetic layer 2. The first ferromagnetic layer 1 and theferromagnetic layer 5 are fixed in magnetization M (shown by the arrow)beforehand such that directions of magnetization are anti-parallel.Magnetization in anti-parallel directions enables writing with a smallercurrent as explained later.

[0165] When a current is supplied to this kind of multi-layeredstructure to flow vertically to the film plane, recording andreproduction are enabled using the second ferromagnetic layer as therecording portion. That is, when the current flows through the firstferromagnetic layer 1 or the ferromagnetic layer 5, conduction electronsreceive spin information corresponding to the magnetization direction ofthe magnetic layer. When the electrons enter into the secondferromagnetic layer 2, if the spin direction those electrons havecoincides with the spin direction corresponding to the magnetizationdirection (shown by the arrow) of the second ferromagnetic layer 2, theelectrons can easily pass the second ferromagnetic layer 2. However, ifthey are anti-parallel, the electrons are reflected and cannot easilypass the second ferromagnetic layer 2.

[0166] At that time, conductance between the ferromagnetic layer 1, 2 issmall, and the change of the magnetoresistance between them is large. Onthe other hand, conductance between the ferromagnetic layers 2, 5 islarge, and the change of magnetoresistance between them is small.Therefore, in the model of FIG. 14A in which they are serially aligned,the former conductance between the ferromagnetic layer 1, 2 is dominant,and the device results in detecting the difference between magnetizationdirections of the ferromagnetic layers 1, 2. That is, an increase ofdecrease of the electric resistance is observed in accordance with themagnetization direction of the second ferromagnetic layer 2, andinformation corresponding to the magnetization direction can be readout.

[0167] On the other hand, in case a predetermined amount of current issupplied to flow vertically to the film plane for recording, conductionelectrons first receive spin information of magnetization M held by oneof the first ferromagnetic layer 1 and the ferromagnetic layer 5 wherethe electrons first enter. Thereafter, the electrons enter into thesecond ferromagnetic layer 2. In this case, if a large quantity ofelectrons enters into the ferromagnetic layer 2, magnetization directionof the second ferromagnetic layer 2 changes in accordance with the spininformation those electrons have. That is, direction of magnetization Mheld by one of the first ferromagnetic layer 1 and the ferromagneticlayer 5 where the electrons first enter tends to be copied to the secondferromagnetic layer (recording layer) 2.

[0168] Electrons passing through the ferromagnetic layer 2 receive spininformation of the first-passing layer of 1 and 5 in form of reactionand tend to orient in the opposite direction. Because of thesetendencies, magnetization direction can be controlled by adjusting thedirection of the current.

[0169] Although FIGS. 14A through 14D show models of parallel-to-planemagnetization, i.e., magnetization directions parallel to the filmplane, models of perpendicular magnetization as shown in FIGS. 15A, 15Cand 15J ensure the same effects. Also regarding the cross-sectionalgeometry of the nanocontact, it may be narrowed downward as shown inFIGS. 14 through 14D, upward as shown in FIGS. 15B through 15H, or mayhave any of other various configurations as shown in FIGS. 6A through6C.

[0170] In the magnetoresistance effect elements shown in FIGS. 14Athrough 15H, direction of magnetization M (shown by the arrow) of thesecond ferromagnetic layer (recording layer) 2 changes with the flowingdirection of a current above a critical value. This direction ofmagnetization of the ferromagnetic layer (recording layer) 2 us used torecord a signal. The signal can be read from the resistance valueappearing when a current lower than the critical current value forwriting is supplied.

[0171] For this purpose, it is necessary to place the ferromagneticlayers 1 and 5 above and below the second ferromagnetic layer 2 servingas the recording layer and to pin their magnetization M in anti-paralleldirections.

[0172]FIGS. 14B through 14D and FIGS. 15D through 15H show structuresconfigured to pin their magnetization.

[0173] In FIG. 14C, the cell has the structure including a nonmagneticintermediate layer 4A, ferromagnetic layer 5A, nonmagnetic intermediatelayer 4B, ferromagnetic layer 5B, and anti-ferromagnetic layer 6A thatare sequentially stacked in the described order on the secondferromagnetic layer 2. The cell further includes an anti-ferromagneticlayer 6B below the first ferromagnetic layer 1. In this manner, thefirst ferromagnetic layer 1 and the ferromagnetic layer 5 can be pinnedin magnetization M. The micro through hole may be wider oppositely asshown in FIG. 15D. Commonly in all cells shown in FIGS. 14A through 15H,there is no up-and-down limitation. Further, direction of magnetizationis not limited to parallel-to-plane magnetization, but may beperpendicular-to-plane (perpendicular magnetization) as shown in FIG.15F.

[0174] In the cell of FIG. 14C, the nonmagnetic intermediate layer 4A,ferromagnetic layer 5A and anti-ferromagnetic layer 6A are stacked inthe described order on the second ferromagnetic layer 2. The cellfurther includes the nonmagnetic intermediate layer 4B, ferromagneticlayer 5B and anti-ferromagnetic layer 6B located under the firstferromagnetic layer 1 sequentially from the nearest thereto. Here again,the first ferromagnetic layer 1 and the ferromagnetic layer 5 can bepinned in magnetization respectively.

[0175] In the cell of FIG. 14D, the nonmagnetic intermediate layer 4A,ferromagnetic layer 5A, nonmagnetic intermediate layer 4B, ferromagneticlayer 5B and anti-ferromagnetic layer 6A are stacked in the describedorder on the second ferromagnetic layer 2. The cell further includes anonmagnetic intermediate layer 4C, ferromagnetic layer 5C andanti-ferromagnetic layer 6B located under the first ferromagnetic layer1 sequentially from the nearest thereto. Here again, the firstferromagnetic layer 1 and the ferromagnetic layer 5 can be pinned inmagnetization respectively.

[0176] In magnetoresistance effect elements shown in FIGS. 14A through14D and FIGS. 15A through 15D, magnetization directions of theferromagnetic layers 1 and 5 are anti-parallel. Due to anti-parallelmagnetization directions, spin transmission and an effect of reactionare added, and writing to the recording layer 2 is accomplishedefficiently.

[0177] From the viewpoint of easier fabrication, models using parallelmagnetization directions of the ferromagnetic layers 1 and 5 as shown inFIGS. 15F through 15H are preferable. Effectiveness of spin transmissionoperation and reaction vary with the area in contact with the recordinglayer 2. Therefore, at the cost of one, i.e. at the cost of slightincrease of the reversing current, directions of magnetization of theferromagnetic layers 1 and 5 can be aligned in parallel. Thus, thenumber of layers stacked for pinning can be decreased, or the number ofsteps in the manufacturing process can be reduced.

[0178]FIGS. 16A through 16E are schematic cross-sectional views thatshow other specific examples of magnetoresistance effect element usablein the magnetic memory device of FIG. 12. In all these specific examplesshown here, one of the first and second ferromagnetic layers 1, 2 ismagnetically pinned in a predetermined direction, and the other isvariable in magnetization direction (shown by the arrow). Additionally,a pair of electrodes 7 are provided outside the first and secondferromagnetic layers (opposite sides remoter from the intermediate layer3) so as to carry out recording or reproduction by supplying a currentfrom a current supply means to these electrodes 7 by direct or indirectcontact such that the current flow through interfaces between everyadjacent stacked films.

[0179] For pinning the magnetization of the ferromagnetic layer, ananti-ferromagnetic layer may be formed on the outer surface of themagnetic layer, or nonmagnetic/ferromagnetic/anti-ferromagnetic layersmay be stacked.

[0180] Reproduction and recording can be executed by bringing about spintransmission and reaction effect between the ferromagnetic layers 1 and2 as explained above by detecting the magnetoresistive effect of theelement itself for reproduction and supplying a current larger than thereproducing current for recording. The structures shown in FIGS. 16Athrough 16E are advantageous in that the structures are very simple,although the device property is somewhat difficult to adjust.

[0181] Also in the magnetoresistance effect elements shown in FIGS. 16Athrough 16E, cross-sectional geometry of the micro through hole is notlimited to the illustrated conical shape, but may be modified to acircular, pyramidal, prismatic, spherical or other geometry.

[0182] The micro through hole in the insulating layer 3 is preferred tobe located between the electrodes 7, 7 which cover the ferromagneticlayers 1 and 2 partly or completely in order to supply the current.Therefore, in the case in which the electrodes 7, 7 cover these layers 1and 2 partly as shown in FIG. 16E, the micro through hole is set up atthe off-center position from a center of the element.

EXAMPLES

[0183] Herein below, embodiments of the invention will be explained ingreater detail in conjunction with examples.

First Example

[0184] As the first example of the invention, here is introduced a modelof magnetoresistance effect element having formed a magnetic nanocontacton nickel (Ni) covered by alumina.

[0185] First of all, for obtaining the multi-layered structure shown inFIG. 8A, aluminum (Al) was deposited by vapor deposition on aferromagnetic layer 1 made of nickel, and its top surface was oxidizedto form alumina as an insulating layer.

[0186] After that, a needle 110 coated with conductive diamond and usedto form a micro through hole was driven close to the top surface ofalumina as shown in FIG. 8B. Then, the voltage of 0.01 V was appliedacross the nickel layer 1 and the needle 110, and while monitoring theflowing current, the needle 110 was driven into the alumina insulatinglayer 3. Movement of the needle 110 was controlled by making use ofthermal expansion caused by electric heating of a distance-changingfunctional portion 130A attached to an upper portion of the arm 140.

[0187]FIGS. 17A and 17B are graph diagrams that show changes in distancebetween the top surface of the ferromagnetic layer 1 and the tip portionof the needle 110 and changes in current flowing between them with time,when the needle 110 is driven at a constant speed.

[0188] In the example shown here, distance was linearly changed withtime, but the flowing current increase exponentially. The set currentwas adjusted to 10A, and when the actual current reached the setcurrent, the curve of the arm 140 supporting the needle 110 wasreleased. Additionally, nickel was deposited by vapor deposition as theferromagnetic layer 2 to bury the through hole made by the needle 110.

[0189] Electrodes were provided in association with the ferromagneticlayers 1, 2 of the magnetoresistance effect element obtained, and itsmagnetoresistive effect was measured.

[0190]FIG. 18 is a graph diagram showing a relation between appliedmagnetic field and electrical resistance in the magnetoresistance effectelement according to the embodiment of the invention. Although more orless hysteresis was observed, resistance substantially decreased when amagnetic field was applied. Resistance at the contact portion of themicro through hole A was approximately 3 kΩ when the magnetic field waszero, and MR ratio as large as 120% was obtained.

Second Example

[0191] As the second example of the invention, a reproducing element formagnetic recording was prepared by using the manufacturing method usedin the first embodiment already explained.

[0192] That is, a thick cobalt (Co) film was formed on the substrate,and alumina was formed thereon. Then, after making the micro throughhole A, 20 nm thick Permalloy was deposited by vapor deposition. Part ofthe Permalloy above the micro through hole A was patterned into anapproximately 20×20 nm square, and part of the underlying cobalt layeras large as 100 nm was cut out. A conductive wire was provided thereto,and the magnetoresistance effect element was moved on the surface of thevertically magnetized medium. As a result, a change of resistancecorresponding to the change of the medium signal was observed.

Third Example

[0193] As the third example of the invention, the magnetic memory deviceshown in FIG. 12 was prepared.

[0194] More specifically, the multi-layered film shown in FIG. 14D wasformed on a conductive substrate by using a sputtering apparatus. In thesame process, the micro through hole A was also formed.

[0195] That is, layers from the anti-ferromagnetic layer 6B to the firstferromagnetic layer 1 were deposited on the electrode layer 20, and apolymer was coated thereon as the insulating layer. Then the microthrough hole A was formed, and the second ferromagnetic layer wasdeposited thereon.

[0196] Additionally, layers from the nonmagnetic intermediate layer tothe anti-ferromagnetic layer 6A were formed as shown in FIG. 14D. Then apolymer having a phase separation structure was coated thereon, therebyto form a mask for micro fabrication. Its surface is next selectivelyetched by ion milling to form a patterned medium. Spaced among cellpatterns were buried with a polymer to smooth the surface.

[0197] By supplying a current to one of cells of the patterned mediumthus obtained by using a probe as an electrode, recording andreproducing test was carried out. In this case, the plus directioncorresponds to the flowing direction of the current from the top to thebottom in FIG. 14D. Thus the resistance of the cell was measured withthe current of 10 μA. At that time, resistance value was 3 kΩ.Additionally, writing was carried out by supplying the recording currentof minus 500 μA, and as a result of measurement of the cell resistancehere again with the current of 10 μA, resistance value was 7 kΩ.

[0198] That is, although a certain degree of hysteresis was observed,the result demonstrated that current-driven writing and current-drivenreading were possible.

Fourth Example

[0199] As the fourth example of the invention, magnetoresistance effectelements where an additive element has been introduced at the throughhole were prepared.

[0200]FIGS. 19A and 19B are schematic diagrams showing a cross-sectionalstructures of the substantial part of a magnetoresistance effectelements experimentally prepared in an embodiment of the invention. Asshown in these figures, the layered region D including the additiveelement are formed on or below the insulating layer 3 in these MRelements.

[0201] The inventors have also formed MR elements where an additiveelement was introduced only at the through hole A as shown in FIG. 7A.The inventors have also formed MR elements where as additive element wasnot introduced.

[0202] In all the MR elements, the deposition process was performed byusing ion beam sputtering system and the etching process was performedby employing an electron beam (EB) reactive etching. The detail of theEB reactive etching will be explained with reference to the eleventhexample of the present invention.

[0203] The intended diameter of the through hole was set to be 10 nm forall samples. The structures of the samples I through V will be explainedherebelow.

[0204] A sample I has a structure shown in FIG. 19A where three atomiclayers of copper (Cu) were inserted as the layered region D. Theferromagnetic layer 1 has a multi-layered structure of PtMn 15 nm/CoFe 4nm/Ru 1 nm/CoFe 4 nm. This ferromagnetic layer 1 was made to be thepinned layer. As the material of the insulating layer 3, SiO2 wasemployed. After growing the SiO2 layer having a thickness of 3 nm, thethrough hole A was formed By incorporating the copper layer as theadditive element, the magnetic coupling between the ferromagnetic layers1 and 2 can be effectively cut off while maintaining the crystallinityat the nanocontact portion. By cutting the magnetic coupling between theferromagnetic layers 1 and 2, the magnetization of the free layer 2 canshift more freely.

[0205] In the conventional MR element, even in the case where anintermediate (spacer) layer of copper is provided, a magnetic couplingbetween the ferromagnetic layers provided at opposite sides thereof maybe inevitable since an exchange interaction therebetween at the thinportion of the copper intermediate layer.

[0206] In contrast to this, by employing the magnetic nanocontactaccording to the embodiment of the invention, the magnetic couplingbetween the ferromagnetic layers 1 and 2 is effectively cut off sincethe inter-layer exchange interaction therebetween becomes negligible.

[0207] In sample I, the ferromagnetic layer 2 was made of CoFe of 4 nmin thickness. A copper layer (not shown) was deposited on theferromagnetic layer 2 as a protective film.

[0208] Next, a sample II has a structure shown in FIG. 19B, where analloy layer of copper (Cu) and aluminum (Al) was deposited and oxidizedin an oxygen atmosphere to form a Cu—Al—O layer as the layered region D.The ferromagnetic layers 1 and 2 were same as the sample I. Theinsulating layer 3 was made of Al₂O₃.

[0209] Cu—Al—O layer is apt to include high resistive particles whichhas a aluminum-rich composition and conductive regions which has acopper-rich composition. Therefore, the effective through hole size canbe reduced and resultant magnetoresistance effect becomes even larger.

[0210] A sample III has a structure shown in FIG. 7A, where oxygen (O)was introduced by a natural oxidation as the additive element. The basicstructure of the sample is same as the sample I except the additiveelement and its introduction process. In the case of sample III, theeffective through hole size can be reduced by introducing oxygen as theadditive element in analogy with the aforementioned sample II.

[0211] A sample IV has a magnetic nanocontact made of permalloy only,where no additive element was introduced.

[0212] A sample V has a conventional CCP-MR structure including amulti-layered structure of PtMn 15 nm/CoFe 4 nm/Ru 1 nm/CoFe 4 nm/Cu 2nm/CoFe 4 nm/Cu.

[0213] A magnetoresistance ratio of each sample was measured and listedin Table 1 shown below. The samples I through IV have magnetoresistanceratios much larger than the sample V having a conventional CCP-MRstructure. The samples I and II have the largest magnetoresistanceratio. TABLE 1 Sample Sample Sample Sample Sample I II III IV Vmagnetoresistance 147% 112% 43% 76% 4% ratio

Fifth Example

[0214] As the fifth example of the invention, a so-called “tandem type”element serially stacking a plurality of magnetoresistance effectelements was prepared.

[0215]FIG. 20 is a schematic diagram showing a cross-sectional structureof the substantial part of a magnetoresistance effect elementexperimentally prepared in an embodiment of the invention.

[0216] As illustrated, ferromagnetic layers 1 and insulting layers 3were alternately accumulated, and a micro through hole A was formed ineach insulating layer 3 so as to connect upper and lower ferromagneticlayers 1 via a magnetic nanocontact of each insulating layer 3. That is,ferromagnetic layers 1 and 2 in the magnetoresistance effect elementshown in FIG. 1A or 1B were commonly used by adjacent magnetoresistanceeffect elements.

[0217] Positions of the micro through holes A formed in individualinsulating layers 3 need not be aligned linearly as shown in FIG. 20.

[0218] The serial structure according to this example is advantageous inthat a larger change of magnetoresistance can be obtained.

[0219] In this kind of multi-layered serial structure, if the microthrough holes A are not equal in opening width, the entire property isregulated by one of micro through holes A having the largest resistance.Therefore, this structure can compensate the possible defect that themicro through holes A tend to become too large.

Sixth Example

[0220] As the sixth example, a magnetoresistance effect element having acolumnar micro through hole is explained.

[0221]FIG. 21 is a schematic diagram showing a cross-sectional structureof the substantial part of a magnetoresistance effect element preparedas this example.

[0222] First, an anti-ferromagnetic layer 6 and a magnetic layer 1 weresequentially formed on a conductive substrate S, and an alumina layer 3having a columnar micro through hole A having the diameter of 5 nm wasformed thereon. The micro through hole A was buried with nickel (Ni) byan electrochemical deposition method. Then by forming the magnetic layer2 thereon, a magnetoresistance effect element having the structure shownin FIG. 21 was obtained.

[0223]FIG. 22 is a graph diagram showing changes of magnetoresistance ofa magnetoresistance effect element according to the instant example ofthe invention. Electric resistance under zero magnetic field wasrelatively small, namely not larger than 100 106 , and a large decreaseof resistance could be obtained under a magnetic field of 20 G or more.

Seventh Example

[0224] As the seventh example of the invention, a reproducing elementfor magnetic recording having the structure shown in FIG. 11A wasprepared. A cross-sectional structure (on the opening surface) of theelement viewed from the medium 200 appears as shown in FIGS. 23.Materials and thicknesses of respective layers of the magnetoresistanceeffect element except for a part of electrode layers EL and magneticshield layers SH are as follows. Ta 5 nm/CoFe 1 nm/opening in the SiO₂layer/CoFe 1 nm/ Ru 1 nm/CoFe 1 nm/PtMn 30 nm/Ta 5 nm

[0225] The opening was made by using FIB (focused ion beam). On sidesurfaces of the magnetoresistance effect element, hard magnet layers HMwere formed to control magnetization of the free layer 2. Part of thefree layer 2 nearest to the hard magnet layers HM function as aninsensitive region 2A for control of magnetization. Therefore, since themagnetoresistive effect of the insensitive region 2A is also included,the detection efficiency degrades. Additionally, since the signalmagnetic field from the medium 200 becomes weaker with the distance fromthe medium 200, response of the free layer 2 degrades, and the detectionefficiency degrades again.

[0226] In contrast, in the structure employed as the instant example, itis possible to exclude the insensitive region 2A and detect the statesensed exclusively in the only portion near the medium 200. That is,this example minimizes the sensitivity loss, and can enhance thedetection efficiency to 1.5 time or more of the detection efficiency ofa simple structure of free layer/intermediate layer/pinned layer.

Eighth Example

[0227] As the eighth example, a 32×32 matrix was formed by arrangingmagnetoresistive cells having the structure shown in FIG. 15G on asubstrate as shown in FIG. 12. Then, 32×32 such matrices were arrangedto form a recording/reproducing medium of 1 Mbit (megabit) in total.

[0228] Using 32×32 probes, recording and reproduction were carried outwith the recording/reproducing medium. That is, one probe was associatedwith each matrix. Aspect of the probing is shown in FIG. 13A. A cell foreach probe PR was selected by means of an XY drive mechanism associatedwith the medium.

[0229] These probes PR were connected in an array via transistors TR asshown in FIG. 24. Then by selecting a bit line BL and a word line WL andthereby turning ON a transistor TR associated with a particular probePR, the probe was selected. This structure was confirmed to enableselection of a number of bits.

Ninth Example

[0230] As the ninth example, a magnetoresistance effect element havingthe cross-sectional structure shown in FIG. 5D was prepared by using the“self-organizing process”.

[0231] First using an ultrahigh vacuum ion beam sputtering apparatus, aflat ferromagnetic layer 1 of CoFe was formed on a substrate.Thereafter, the substrate temperature was raised to 200° C., and a SiO₂layer 3 was grown thereon. Depending on the condition, the SiO₂ layergrows in form of islands.

[0232]FIGS. 25A through 25C are schematic diagrams showing plan-viewedconfigurations of a SiO₂ layer 3 (on the ferromagnetic layer 1) thatchanges with growth time.

[0233] The SiO₂ layer 3 appears as minute islands as shown in FIG. 25Ain its initial growth period and larger islands in the middle growthperiod, then grows to connect the islands and finally becomes acontinuous film.

[0234] On each of these different aspects of the SiO₂ layer 3 during itsgrowth, a CoFe ferromagnetic layer 2 was deposited, and magnetoresistiveeffect was examined.

[0235]FIG. 26 is a graph diagram showing growth time of the SiO₂ layeron the abscissa and MR ratio on the ordinate. In the initial period ofthe growth, since the ferromagnetic layers 1 and 2 contact over a widearea, MR effect is very small. However, as the growth of the SiO₂ layer3 progresses to diminish the contact area between the ferromagneticlayer 1 and 2 to an appropriate degree, MR ratio rapidly increases. Whenthe growth of the SiO₂ layer 3 further progresses, since it covers thesurface of the ferromagnetic layer 1, MR ratio passes the peak andrapidly decreases. It is presumed that TMR effect appears under thecondition immediately after the SiO₂ layer 3 covers the surface of theferromagnetic layer 1. However, since the insulating layer 3 becomesthicker with progress of the growth, MR ratio rapidly decreases.

[0236] As explained above, according to the method taken as thisexample, a large MR value can be obtained by forming the micro throughhole without making free use of micro-fabrication technologies.

Tenth Example

[0237] As the tenth example of the invention, cells having magnetizationdirections related as shown in FIG. 16A were fabricated by the samemethod as the eighth example, and the magnetic recording medium of FIG.12 was formed.

[0238] After a PtMn layer (10 nm thick) was formed on a base layer 20 byusing an ultrahigh vacuum sputtering apparatus, a Co layer (5 nm thick)1 was grown. Islands of an alumina layer 3 were further formed, and a Colayer (2.5 nm) 2 was formed thereon. Additionally, a Ta layer (3 nm) wasformed thereon. After this multi-layered film was annealed in an vacuummagnetic field, a cell array of regular alignment of cells each sized 70nm×120 nm was formed by using an EB (electron beam) exposure apparatus.

[0239] Using this array, a probe PR was brought into contact with one ofthe cells, and a resistance change of the element appearing uponsweeping the current value was examined. As a result, resistance of theelement increased under the flow of a current not smaller than plus 1.2mA; when the current was supplied up to 2 mA and the direction of thecurrent was reversed thereafter, the resistance value remained large upto near minus 1.4 mA; and when the current value was increased from thatcurrent value as a border further to the minus direction, resistancedecreased. This kind of response of resistance change was similarlyreproduced in some repeated experiments. Changing ratio of resistance bycurrent sweep was 22% in average.

[0240] Heretofore, some models of magnetoresistance effect elementsaccording to embodiments of the invention and some manufacturing methodsthereof have been explained with reference to FIGS. 1A through 26.

[0241] Herein below, the manufacturing methods of the micro through holeformed in magnetoresistance effect elements according to the embodimentsof the invention will be explained.

[0242] According to an embodiment of the invention, a manufacturingmethod of a magnetoresistance effect element comprises: forming aninsulating layer on a first ferromagnetic layer; forming a hole reachingsaid first ferromagnetic layer by thrusting a needle from the topsurface of said insulating layer; and depositing a ferromagneticmaterial to form a second ferromagnetic layer which buries said hole andoverlying said insulating layer.

[0243] In the method, a current flowing between said first ferromagneticlayer and said needle may be monitored, and thrusting of said needle maybe interrupted when said current reaches a predetermined value.

[0244] According to another embodiment of the invention, a manufacturingmethod of a magnetoresistance effect element comprises: limitingelectrical conduction between upper and lower magnetic layerssandwiching an insulating layer substantially to the irradiated regionby a irradiation with a converged flux of charged particles.

[0245] According to yet another embodiment of the invention, a method offabricating a magnetoresistance effect element comprises: etching aninsulating layer by supplying a reaction gas onto a surface of saidinsulating layer and by irradiating said insulating layer with aconverged electron beam to compose a volatile gas; and burying theetched region with a magnetic layer which is one of components of saidmagnetoresistance effect element.

[0246] According to yet another embodiment of the invention, a method offabricating a magnetoresistance effect element comprises: etching aninsulating layer surface with a converged ion beam; and burying theetched region with a magnetic layer which is one of components of saidmagnetoresistance effect element.

[0247] According to yet another embodiment of the invention, a method offabricating a magnetoresistance effect element including: a firstferromagnetic layer; an insulating layer overlying said firstferromagnetic layer; and a second ferromagnetic layer overlying saidinsulating layer, said insulating layer having formed a hole, said firstferromagnetic layer and said second ferromagnetic layer being connectedto each other via said hole, said method comprises: changing a crystalarrangement of at least one of said first and second ferromagneticlayers by irradiating with a electron beam.

[0248] Herein below, other specific examples related to themanufacturing methods according to the embodiments of the invention willbe explained with reference to FIGS. 27 through 67.

Eleventh Example

[0249] As the eleventh example of the invention, a specific exampleforming a micro through hole by etching using an electron beam will beexplained.

[0250]FIG. 27 is a schematic diagram for explaining the method used inthis example. This apparatus includes an EB source 310 located in avacuum chamber 300 to supply an electron beam, a sample stage 320, anozzle 340 for supplying a reaction gas to the sample, and a sampleheater 330 for raising the temperature of the sample. The vacuum chamber300 is evacuated through an exhaust port 350 to maintain a low-pressureatmosphere.

[0251] Boring of the micro through hole was carried out in the followingmanner.

[0252] A sample having the ferromagnetic layer and the insulating layer3 is first fixed on the sample stage 320. By monitoring the scanned EBimage, the boring position of the insulating layer 3 is determined. Theintended position is concentrically irradiated with an electron beam,and the reaction gas was blown to around it through the nozzle 340.Additionally, for the purpose of promoting the reaction, temperature ofthe sample is adequately raised by using the sample heater 330. As aresult, the supplied gas and EB act on the surface of the insulatinglayer 3, and makes it vaporize as a volatile substance. Thus the etchingis promoted. Additionally, the rise of the sample temperature enhancesthe reaction speed and shortens the process time. Moreover, it isprevented that a carbon fluoride layer is accumulated on the magneticlayer 1, which is the end point reluctant in reaction, by EBirradiation.

[0253]FIG. 28 is a schematic diagram showing a process of fabricating amagnetoresistance effect element. That is, it shows the process offorming the micro through hole A in the SiO₂ layer 3 formed on the CoFemagnetic layer 1.

[0254] First, a PtMn anti-ferromagnetic layer (for example, 15 nmthick), not shown, is formed on a base film, not shown, (made of t nmthick tantalum, for example). After that, the CoFe layer 1 is formedthereon as the pinned layer of the MR element. Then a 3 nm thick SiO₂layer 3 if formed thereon.

[0255] In the next step, an electron beam concentrated to a beamdiameter not larger than 10 nm is irradiated onto a spot of the surfaceof the SiO₂ layer 3. For the purpose of preventing the insulator fromcharging up, the EB acceleration voltage was adjusted to 10 kV. Underthe condition, XeF₂ is blown as the reaction gas. As a result, SiO₂ actson the gas and vaporizes as a silicon fluoride. However, since thereaction gas makes no reaction product with the CoFe magnetic layer 1,reaction stops after etching the SiO₂ layer 3 alone.

[0256] To prevent influences of charge-up, it is recommended to declinethe sample by approximately 30 degrees or promote emission of secondaryelectrons. The reaction gas to be supplied from the nozzle 340 is notlimited to XeF₂, but CHF₃ or other Freon-family gas is also effective.As an additional or alternative countermeasure against charge-up, ametal film such as Nb (niobium) film may be formed on the SiO₂ layer 3.

[0257]FIG. 29 shows an example having formed a Nb film 400. Thickness ofthe Nb film 400 may be, for example, around 3 nm. In this case, anelectron beam is irradiated using CF₄ as the reaction gas to form spotthrough holes 400A in the Nb film 400. Thereafter, the reaction gas isreplaced by XeF₂, and the SiO₂ layer 3 is selectively etched by EBirradiation.

[0258] As such, the metal film 400 formed on the insulating layer 3prevents the diameter of EB irradiation from being enlarged bycharge-up. Additionally, the metal film 400 overlying the insulatinglayer 3 improves the crystallographic property of the magnetic filmformed thereon, and thereby enhances the soft magnetism and theresistance change. That is, it contributes to improvement of themagnetic field sensitivity of the magnetoresistance effect element.

[0259]FIGS. 30A through 30C are cross-sectional views showing anotherprocess of forming a nanocontact.

[0260] It takes much time to form the micro through hole A by EB in eachelement one by one. The process time for making the micro through holesA by EB can be shortened by forming the metal film 400 alone as shown inFIG. 30A, and thereafter carrying out RIE (reactive ion etching) by CFH₃gas over the entire wafer as shown in FIG. 30B, or selectively etchingthe SiO₂ layer 3 throughout the entire wafer by CDE (chemical dryetching) producing less physical damage.

[0261] It is also possible to copy the through hole 400A in the metal tothe insulating film as shown in FIG. 30C by carrying out sputteringetching or ion milling over the entire wafer after making the throughholes 400A in the metal film 400 as shown in FIG. 30A. This method isalso effective to reduce the process time because the micro throughholes A can be formed simultaneously throughout the entire wafer.

[0262] After the micro through holes A are formed in the SiO₂ layer 3,the magnetic layer 2 (for example, approximately 5 nm thick CoFe) to beused as the free layer is formed as shown in FIG. 31A, and anapproximately 5 nm thick Ta film 5 is formed as a protective layer.Through these steps, the MR multi-layered film having point contactsbetween the pinned layer and the free layer can be obtained.

[0263] As shown in FIG. 31B, an approximately 2 nm thick Cr film or Cufilm to be used as the nonmagnetic intermediate layer (spacer layer) inthe MR element may be formed before the CoFe magnetic film 2 as the freelayer is formed. This is effective for facilitating magnetic reversal ofthe contact portion of the free layer 2 under an external magnetic fieldand for rendering it responsive to a lower signal magnetic field.

[0264] The same effect will be obtained also when the nonmagneticintermediate layer 4 is formed on the pinned layer 1 as shown in FIG.31C.

[0265] On the other hand, upper and lower magnetic layers may bereversed to use the lower as the free layer and the upper as the pinnedlayer.

[0266]FIG. 32A shows an example in which the upper and lower layers areinverted. In this example, after the micro through hole A is formed, theCoFe layer 1 as the pinned layer, anti-ferromagnetic layer 6 formagnetically pinning the CeFe film 1, and Ta protective film 9 areformed. Since the magnetic film 1 buried in the micro through hole A isinevitably liable to contain crystal defects, a model burying the holdwith a pinned layer not required to have the soft-magnetic property ismore advantageous from the viewpoint of sensitivity to the signalmagnetic field. Even when the magnetic film 2 as the pinned layer isburied, the nonmagnetic intermediate layer may be first buried as shownin FIG. 32B. Here again, magnetic reversal of the free layer 1responsive to the signal magnetic field is takes place smoothly, andsensitivity to the signal magnetic field can be enhanced.

[0267] Even when a spacer layer is formed on the free layer 2 as shownin FIG. 32C, the same effect will be obtained.

[0268] To ensure good crystalline property of the buried magnetic layer2 and thereby obtain high MR, the micro through hole A preferably has amoderately tapered side surface and is preferably minimized in surfaceroughness. To make a moderate taper, it is recommended to process theinsulating film 3 by etching such as ion milling with oblique angle ofincidence as shown in FIG. 33 or RIBE (reactive ion beam etching) withoblique angle of incidence. To minimize the surface roughness of thetapered surface, SiO₂, alumina or other amorphous oxide is preferablyused as the material of the insulting layer 3.

[0269] As explained above, micro through holes can be formed at anyposition by irradiating with electron beam with a reactive gas. Theprinciple of the technique of opening a through hole on a substrate byusing electron and a reactive gas is disclosed by J. W. Coburn in theliterature, J. W. Coburn, J. Appl. Phys., Vol. 50, No. 5, pp. 3189-3196(1979).

[0270] The feature of this method is that the physical damage of thetarget is very small since the electron bombardment is employed.Therefore by applying this technique to the nanocontact MR element, anetching of an insulating layer can be performed by using an electronbeam converged into a very fine beam without introducing a physicaldamage into the underlying magnetic layer. Even in the case where thevery small region is locally etched, a degradation of the beamconvergence due to a charge up of the insulating layer can be preventedby coating it with a metallic film.

[0271] In the case of nanocontact MR element, a good crystallinity atthe nanocontact portion is required. Therefore, the electron beametching technique with the reactive gas is especially a usable process.Besides, the process time is quite short since the range to be etched isvery limited. Further, after the etching process, the shape of thethrough hole can be easily observed and the process feedback can be madeby the result. These features are advantage of applying the electronbeam process to the formation of nanocontact MR element.

[0272] In some case, after the micro through hole is formed in theinsulating layer it would be necessary to take the work in process outinto the atmosphere without forming the overlying magnetic layer,layered region including the additive element or nonmagneticintermediate (spacer) layer. In such a case, a surface of the underlyingmagnetic layer exposed at the bottom of the through hole may beundesirably oxidized by an atmosphere of a poor quality. In order toremove such an undesirably formed oxide layer, the following two methodscan be used.

[0273] The first method is to remove the oxide layer by using aconventional sputter etching technique. In this case, a damage may beintroduced into the magnetic layer. Therefore, after performing ansputter etching of the oxide layer by using an ion beam, an annealingprocess is preferably performed by using electron beam or laser beam inorder to improve the crystal quality. The sputtering process, theannealing process and the following deposition process of the overlyinglayer may preferably performed continuously without breaking the vacuum.

[0274] For the annealing process, conventional heating technique can beemployed as well.

[0275] The second method is to remove the undesirably formed oxide layerby irradiating with an atomic hydrogen. This process may also preferablyperformed continuously with the following deposition process of theoverlying layer without breaking the vacuum.

[0276] An atomic hydrogen can be generated by cracking a hydrogen gas.For example, a hydrogen gas can be cracked (decomposed into a atomichydrogen) by introducing the hydrogen gas into a filament made oftungsten or a tube made of tantalum which is located near the work(specimen) and heated (for example in a temperature range of 1400through 2000 degrees in centigrade or even higher). The distance betweenthe nozzle and the work may be about 10 cm or larger.

[0277] In this case, an annealing process to improve the crystallinityof the magnetic layer may also preferably performed at the same time orafter the reduction of the oxide layer is performed. A thermal radiationfrom the hydrogen cracking source, electron beam irradiation or laserbeam irradiation may be used in as the annealing technique.

[0278] The above-mentioned process of removing the oxide layer can beemployed in any other embodiment of the invention.

Twelfth Example

[0279] As the twelfth example of the invention, a process for making themicro through hole by locally heating spots of the MR multi-layered filmwith EB will be explained FIGS. 34A through 34C are cross-sectionalviews showing the manufacturing process of a magnetoresistance effectelement taken as this example.

[0280] First as shown in FIG. 34A, a PtMn anti-ferromagnetic layer 6 (14nm thick), CoFe magnetic layer 1 as the pinned layer (2 nm thick), SiO₂insulating layer 3 (2 nm thick), CoFe layer as the free layer (2 nmthick) and Ta layer as the protective layer 9 (5 nm thick) are formedsequentially from the bottom to the top.

[0281] Next as shown in FIG. 34B, an electron beam concentrated to aspot diameter not larger than 10 nm is irradiated from above the Taprotective layer 9.

[0282] As a result, as shown in FIG. 34C, temperature rapidly rises inthe region irradiated with the electron beam, and invites enlargement ofthe grain size, which causes segregation of Si atoms and O atoms formingthe SiO2 layer 3 along the interface or incorporation of a part thereofinto the CoFe layers 1, 2. As a result, the insulating layer 3 locallydisappears from portions irradiated with electron beams. Thus the upperand lower magnetic layers 1, 2 can be connected to each other by pointcontacts.

[0283] The structure shown in FIG. 35A is also employable, in which anonmagnetic spacer layer 4A of Cr, for example, and a nonmagnetic spacerlayer 4B of chromium oxide, which is an oxidized surface portion of thenonmagnetic spacer layer 4A, are inserted between the upper and lowermagnetic layers 1, 2.

[0284] Here again, in the same manner, by local EB irradiation fromabove the Ta protective layer 9 as shown in FIG. 35B, local removal ofthe spacer layers 4A, 4B and connection of the upper and lower magneticlayers 1, 2 can be accomplished as shown in FIG. 35C. In this case, oncethe electric conduction is attained between the upper and lower magneticlayers 1, 2 via the micro through hole formed in the nonmagnetic spacerlayers 4A, 4B, both advantages are accomplished, namely, an increase ofMR by point contact and an increase of sensitivity by the free layer 2being sensitive even to a low signal magnetic field.

[0285] One of advantages of irradiation of an electron beam from abovethe Ta protective layer 9 is to omit the process of making the microthrough hole during deposition of the MR film, which contributes tocreating cleaner interfaces between stacked layers, and anotheradvantage is to form point contacts by only one-shot EB irradiation,which contributes to shortening the process time.

[0286] This EB irradiation process is still effective even in the modelshown in FIGS. 36A through 36C in which an oxide layer 1A (Co—Fe—O) byoxidization of the pinned magnetic layer 1 lies on the lower pinnedmagnetic layer 1, and in the model shown in FIGS. 37A through 37C inwhich an oxide layer 2A (Co—Fe—O) is formed under the upper freemagnetic layer 2.

[0287] In case electron beams are irradiated with a spot as shown inFIG. 38A, it sometimes results in forming a point contact PC at the veryposition irradiated as shown in FIG. 38C, or it sometimes results informing a plurality of point contacts PC around the irradiated spot asshown in FIG. 38B. In any of these cases, the point contacts can be usedas nanocontacts of magnetoresistance effect elements.

[0288] In case the magnetoresistance effect element is used in amagnetic head, the electron beam is preferably irradiated proximately tothe medium traveling plane.

[0289]FIG. 39 is a schematic diagram illustrating that EB irradiationposition is set nearer to the medium traveling plane than the devicecenter C by reading alignment marks AM after the MR multi-layered filmis formed.

[0290]FIG. 40 is a schematic diagram that illustrates configuration of adevice. The magnetoresistive film MR is sandwiched by upper and lowerelectrodes EL, and by vertical bias films HM from right and left sides.As shown here, the point contact PC formed by EB irradiation is out of acenter C of the device toward the medium traveling plane ABS. In thismanner, it is possible to locate the magnetic detector portion of the MRelement closer to the medium traveling plane ABS and thereby supply thesense current concentrically to the portion where a large signalmagnetic field is obtained from the recording medium.

[0291] Also when etching is carried out by using EB as explained inconjunction with the eleventh example, a position nearer to the mediumtraveling plane ABS is preferably selected to form the micro throughhole.

[0292] In the instant example, in the region irradiated by EB, thecrystal grain size increased, and crystalline defects decreased. As aresult, the device resistance decreased, and enhancement of the MRchange was observed. However, improvement of the soft magnetism couldnot be confirmed clearly. Its reason probably lies in that theelectrical nature of the element depends on the crystallographicproperty exclusively of the conductive region; however, in regard to thesoft-magnetic nature, since the free layer 2 entirely gets into exchangecoupling to move in magnetization as a through hole, the effect of thelocal decrease of defects does not appear clearly.

[0293] This demonstrates that local annealing by EB irradiation is amethod capable of controlling the electrical nature and the magneticnature of the element independently as compared with other methodsheating the entire element in an oven, for example.

[0294] For example, FeCo of a bcc crystal structure exhibiting largecrystal magnetic anisotropy is expected to provide large MR, but itssoft magnetism deteriorates as the crystal size increases. Taking itinto consideration, as shown in FIG. 41A, bcc-FeCo substantiallyentirely made up of minute crystal is formed, and EB is irradiatedexclusively to its conductive region. Then, as shown in FIG. 41B,although the crystal size slightly increases in the EB-irradiatedportion, crystalline defects decrease in the sense current conductiveregion. Thus, the element satisfies both a large MR and soft magnetism.This method is effective also when stacking a NiFe (Permalloy) alloyfilm to assist the soft magnetism.

[0295] Annealing by EB irradiation can be used to promote selectivegrowth only in a specific crystalline orientation.

[0296]FIG. 42 is a schematic diagram illustrating MR element having somegrowth axes (for example, [111], [100] and [110]). These growth axes canbe confirmed as difference in contrast, for example, in a SI (secondaryion) image obtained by irradiation of ion beams. In case the MR elementis made up of a plurality of crystal grains different in surfaceorientation, noise may be produced during operation of themagnetoresistance effect element. This phenomenon becomes more and morenoticeable as the element is downsized to be composed of a few number ofcrystal grains. Additionally, if the point contact is formed near agrain boundary, influences of the current magnetic field additionallyaffect the operation reliability.

[0297] Therefore, in case of point irradiation of EB, the position forirradiation is preferably selected, avoiding such grain boundaries. Notonly by avoiding grain boundaries but also by scanning with EB underspecial control, crystal grains of a specific orientation can be grown.

[0298] For example, as shown in FIG. 43A, if the EB irradiation spot isgradually expanded in a portion of [111]-oriented crystal grains, thenthe [111]-oriented portion can be enlarged. Then, it is desirable thatthe entire region of the point contact PC is uniformed in orientation asshown in FIG. 43B.

[0299] In this example, improvement of the crystallographic property byEB heating may be carried out in an occasion during deposition of layersof the MR film instead of an occasion after deposition of all theselayers.

[0300]FIG. 44A shows a model in which a contact through hole HC isformed in a multi-layered structure including a free magnetic layer 1,CrAs layer 410 for the purpose of increasing the resistance change, SiO₂layer 3, and Nb conductive layer 40 in the order from the nearest to thesubstrate (not shown). EB is irradiated into the contact through hole CHto heat the CrAs layer. This contributes to improving thecrystallographic property and orientation of the part of the CrAs layer410R and obtaining a structure exhibiting a high electron polarizingproperty.

[0301] After that, as shown in FIG. 44B, the magnetic layer as thepinned layer, anti-ferromagnetic layer 6 and protective layer 9 areformed. EB irradiation inserted in the midst of the stacking process cansurely heat only a specific layer.

[0302] On the other hand, as shown in FIG. 45A, local EB irradiation maybe carried after all the layers of the MR film (sequentially from thebottom, CoFe free layer 1, CrAs layer 410, Cr spacer layer 4A, Cr oxidelayer 4B, CoFe pinned layer 2, PtMn anti-ferromagnetic layer 6 and Taprotective layer) are formed. In this case, both the formation of thenanocontact and improvement of the crystallographic property of theirradiated part of the CrAs layer 410R can be achieved.

[0303] That is, the atomic arrangement of CrAs layer 410 isreconstructed in accordance with the atomic arrangement of underlyingand overlying layers. Thus, by irradiating with EB locally onto thenanocontact region, the selective annealing thereof may be effectivelyperformed without affecting the remaining portion.

[0304] Additionally, crystalline defects, distortion or other damageintroduced into the underlying magnetic layer in the boring process ofthe insulating layer 3 can be removed by EB irradiation.

[0305]FIG. 46A shows a structure having damage DM introduced in a topsurface portion of the underlying magnetic layer 1 in the boring processby RIE. If EB is irradiated into the through hole as shown in FIG. 46B,the damage DM at the very position can be removed by local annealing(FIG. 46C).

[0306] As an alternative process, even when the upper magnetic layer 2is formed to bury the hold and the buried portion is thereafter annealedby EB, the same effect is obtained, and simultaneously, crystallinedefects of the magnetic material buried in the through hole can bereduced as well. As a result, a MR element having a high MR change canbe obtained.

[0307] As explained above, local heating by irradiation of EB isadvantageous for the formation of nanocontact MR element because therequired electrical characteristics of the magnetic nanocontact and therequired through hole magnetic characteristics of the free layer can beboth realized.

[0308] The local heating may be performed by using a laser irradiationinstead of the electron beam irradiation. In the case of laserirradiation, if the surface layer is transparent to the laser beam, itbecomes easy to focus the beam onto the underlying portion.

[0309] For example, insulating layer is formed after forming the freelayer (or pinned layer), then the insulating layer is irradiated with alaser beam to make a “pillar” which connects the underlying andoverlying magnetic layers. Then, a pinned layer (or free layer) is beformed on the insulating layer. Thus a nanocontact MR element is formed.

Thirteenth Example

[0310] As the thirteenth example of the invention, a method of formingnanocontacts by FIB (focused ion beam) will be explained. In case ofFIB, because of a large mass of colliding particles (ions), onlyirradiation is basically sufficient for etching.

[0311]FIGS. 47A and 47B are cross-sectional views illustrating a methodof making micro through holes in the SiO₂ layer 3 formed on the CoFemagnetic layer 1.

[0312] First, a PtMn anti-ferromagnetic layer (15 nm thick), not shown,is formed on a base layer (5 nm thick Ta), not shown. Thereafter, theCoFe layer 1 is formed thereon as the pinned layer of the MR element,and a 3 nm thick SiO₂ layer 3 on the CoFe layer 1.

[0313] After that, as shown in FIG. 47A, FIB concentrated to a beamdiameter not larger than 10 nm is irradiated onto a spot of the surfaceof the SiO₂ layer 3. If the dose of FIB is adequately controlled, themicro through hole A will be formed in the SiO₂ layer 3 as shown in FIG.47B. Ga ions typically used as the FIB source are liable to undesirablyetch the CoFe layer 1 as well, and need strict control of the dosethereof. If the etching selectivity of the SiO₂ layer 3 and the CoFelayer 1 is sufficiently large, the CoFe magnetic layer can be preventedfrom over-etching.

[0314] Selectivity can be raised by, for example, carrying out FIBprocessing while blowing Freon-family gas as the reaction assist gas AGonto the region to be processed, as shown in FIG. 48A. It will result inpreventing over-etching of the CoFe magnetic layer 1 and successfullyforming the micro through hole A as shown in FIG. 48B. In addition toFreon-family gases such as CHF₃, iodine gas is also usable.

[0315] Even when FIB is used to process the SiO₂ layer 3 as shown inFIG. 49A, FIB processing of the SiO₂ layer may be interrupted at a halfdepth of the SiO₂ layer 3 as shown in FIG. 49B, and the remainder may beetched by using another method.

[0316] As this etching method, RIE or CDE having a very slow etchingrate for the magnetic layer 1 is preferably used to prevent undesirableproblems such as over-etching of the CoFe magnetic layer 1 and damagecausing deterioration of the crystalline property (FIG. 49C). That is,by interrupting FIB halfway and finally etching the magnetic layer 1 byRIE or CDE giving less damage thereto, etching with still less damagecan be achieved.

[0317] In this case, the initial thickness of the SiO₂ layer 3 should bedetermined slight larger as much as the thickness etched by RIE or CDE.

[0318] A Ta film, for example, may be formed on the top surface of theSiO₂ layer 3 as shown in FIGS. 50A through 50C to minimize over-etchingof the SiO₂ layer 3 by RIE or CDE. More specifically, as shown in FIG.50A, a 3 nm thick Ta film 9 is formed on the SiO₂ layer 3, and itsboring processing is carried out by FIB.

[0319] When the through hole reaches the top surface of the SiO₂ layer 3as shown in FIG. 50B, the process is switched to RIE or CDE as shown inFIG. 50C.

[0320] By forming on the SiO₂ layer 3 a mask layer 9 of a material forwhich large etching selectivity is obtained by RIE or CDE, it ispossible to minimize a decrease of the film thickness by RIE or CDE withFreon gas such as CHF₃ and to minimize unevenness of the thickness ofthe SiO₂ layer 3 caused by excessive etching time or uneven progress ofetching along the surface.

[0321] In order to taper the wide wall of the micro through hole suchthat a magnetic layer 2 minimized in defect can be buried, RIBE withoblique angle of incidence is also preferable.

[0322] If a metal mask layer 9 is used, undesirable enlargement of thebeam size by charge-up can be prevented similarly to the case using EB.Additionally, the metal mask layer 9 functions as a buffer layer of themagnetic layer 2 formed thereon, and contributes to improving thecrystalline property of the magnetic layer 2 and thereby enhancing theoutput and sensitivity.

[0323] The process can be similarly carried out solely by FIB.

[0324] First as shown in FIG. 51A, after forming a multi-layeredstructure stacking the CoFe magnetic layer 1, SiO₂ oxide layer 3 and Tamask layer 9 from the bottom, FIB is irradiated.

[0325] Once the through hole is formed in the Ta mask layer 9 as shownin FIG. 51B, the SiO₂ layer 3 is excavated by FIB again, as shown inFIG. 51C. At that time, assist gas AG such as CHF₃ is introduced toincrease the etching rate of the SiO₂ layer 3 and thereby increase theselectivity of the etching rate of the SiO₂ layer 3 relative to the CoFemagnetic layer 1.

[0326] To simplify the process, the assist gas AG may be blown as of thefirst etching of the Ta film (FIG. 51A). However, in case the materialused as the mask layer 9 acts on the assist gas AG, etching mayundesirably progress even at skirts of the FIB beam where etching doesnot progress usually, and it may results in excessively enlarging thethrough hole. Therefore, it is desirable to select an assist gas AG thatacts on the insulating layer 3 but does not act on the mask layer 9 andthe magnetic layer 1.

[0327] Furthermore, a spacer layer 4 (for example of Cu) may be insertedas shown in FIG. 52 to use it as an etching stopper.

[0328] In the above-mentioned explanation, gallium (Ga) is used as theion source, however, any other appropriate element can be used in theinvention. For example, if the gallium may possibly remain on theprocessed surface, argon (Ar) can be used as the ion source.

Fourteenth Example

[0329] As the fourteenth example, a process capable of forming microthrough holes simultaneously all over the wafer will be explained.Simultaneously forming micro through holes throughout the entire waferis more advantageous for shortening the process time that forming themone by one.

[0330]FIGS. 53A through 54D are diagrams showing the process taken asthe instant example.

[0331] First referring to FIG. 53A, a 0.1 μm thick photo resist PR iscoated on an alumina insulating layer 3 (6 nm thick) formed on themagnetic layer (not shown), and it is patterned to the position X forthe through hole.

[0332] As shown in FIG. 53B, a 7 nm thick SiO₂ film 420 is formedthereon. The SiO₂ film 420 coated the sidewall of the photo resist PR bythe thickness of 5 nm. Further, as shown in FIG. 53C, a 0.1 μm thickphoto resist PR is coated.

[0333] Then the surface is shaved to a thickness around 30 nm by ionmilling or RIE etch-back to expose the SiO₂ 420 on the sidewall of photoresist PR on the top surface as shown in FIG. 53D such that a 5 nm thickline of the SiO₂ film 420 appear on the top surface.

[0334] This t nm thick line of SiO2 layer 420 is next selectively etchedby RIE using CHF₃ gas as shown in FIG. 54A. Additionally, RIE usingCHF₃—CF₄ mixed gas is conducted to remove a half depth (approximately 3nm) of the alumina insulating layer 3.

[0335] Then the pair of photo resist layers PR remaining on the topsurface are removed by RIE using O₂ gas, and the underlying SiO₂ film420 is also removed by RIE using CHF₃ gas. Since the etching rate of RIEusing any of these gases for the alumina insulating layer 3 is one forthin maximum, removal of the alumina insulating layer 3 by the etching isquite a little, if any.

[0336] Through the process explained above, 5 nm wide, 3 nm deep groovesG are formed by repeating the process shown in FIGS. 53A through 54Bwhile rotating the patterning direction by 90 degrees. Then, as shown inFIG. 54D, a 5×5 nm square through hole CH is formed at the crossingpoint of these orthogonal grooves G.

[0337] This process explained above could greatly reduce the timerequired for boring. When RIE is employed, the sidewall of the throughhole CH is shaped to be aslant as steep as 80 degrees or more. When CDEis employed, the sidewall of the through hole CH gently inclines in formof a wine cup. If the magnetic film buried thereon is the free layer, agently inclined sidewall ensures more excellent soft-magnetism of themagnetic material buried in the through hole.

Fifteenth Example

[0338] As the fifteenth example of the invention, a method of boring athrough hole using a needling technique by AFM (atomic forcemicroprobe).

[0339]FIG. 55 is a schematic diagram for explaining a process usingreducing reaction in this example.

[0340] A sample was prepared by forming an alumina insulating layer 3 (5nm thick) on a magnetic layer 1. The needle of AFM is coated with ametal film, and an electric field is applied between the needle ND andthe sample in a reducing atmosphere by blowing H₂-mixed forming gas toprevent generation of new oxides. As a result, a current suddenly beginsto flow at a certain magnitude of the electric field, and due toreducing reaction, the region stabbed with the needle ND becomes aconductive region (Al). Since the needle ND contacts, the electric fluxline is dense at the contact portion, and reducing reaction progressesfrom that portion.

[0341] A spacer layer 4 may be interposed between the alumina insulatinglayer 3 and the magnetic layer 1. In case a metal oxide is used as thematerial of the insulating layer 3, such an oxide may be formed by firstforming a film of aluminum (Al) or other metal and thereafter oxidizingit.

[0342] The insulating layer 3 used in this example is preferably a metaloxide. However, in the case where SiO₂ is used, it is reduced withelectricity from the needle ND to form Si or Si compound, andthereafter, as shown in FIG. 56, it is removed by RIE to complete thecontact through hole CH.

[0343] Such processing may be carried out after the magnetic layer 2 isstacked on the insulating layer 3. That is, as shown in FIG. 57, if anelectric field is locally applied from the needle ND to a sample of asandwich structure of the magnetic layer 1, insulating layer 3 andmagnetic layer 2, the insulating layer 3 is locally reduced. Thus alocal conductive region can be formed.

[0344] In an embodiment of the invention, oxidation reaction is alsousable.

[0345]FIGS. 58A through 58C are schematic diagrams for explaining aprocess using oxidation.

[0346] On the magnetic layer 1, a layer 3A of silicon (Si), for example,is formed beforehand. When the needle ND is brought into contacttherewith and an electric field in the opposite direction is applied inan oxidizing atmosphere, anodic oxidation locally progresses. As aresult, as shown in FIG. 58A, a minute SiO₂ region is formed.

[0347] After that, this SiO₂ region is selectively removed by etchingsuch as RIE. This etching is preferably conducted under a condition withlarge etching selectivity relative to silicon (Si) as the matrix.

[0348] After that, the silicon layer 3A is oxidized into SiO₂. Thus theinsulating layer having the micro through hole is obtained.

[0349] The process using AFM technique is advantageous to confirm theposition for the opening on the sample beforehand and facilitate itsadjustment, if necessary. Especially when the MR element according to anembodiment of the invention is formed, because of its locally conductiveconfiguration, the conductive region is desired to be determinedavoiding defects, foreign matters and boundaries. In such cases, bypreviously knowing the film surface morphology by AFM scanning, theboring position can be adjusted. Furthermore, when the needle ND made ofa magnetic material is used, this process has a great advantage also inenabling confirmation of the magnetic state of the sample surface by MFM(magnetic force microscope) technique.

Sixteenth Example

[0350] As the sixteenth example, functions of the spacer layer 4 made ofa nonmagnetic material will be explained.

[0351]FIG. 59A shows a structure including a Cu layer (2 nm thick), forexample, first formed as a spacer layer 4 on the SiO₂ insulating layer 3overlying the CoFe layer 1 and defining the contact through hole CH, anda CoFe magnetic layer 2 (4 nm thick) thereafter formed thereon. Sincethis structure does not bring the magnetic layers 1 and 2 into directcontact, it can prevent degradation of the soft magnetism caused byexchange coupling of the free layer (for example, magnetic layer 2) withthe pinned layer (for example, magnetic layer 1).

[0352] Especially, the magnetic material buried in the contact throughhole CH contains a number of defects, and makes it difficult to quicklyrotate magnetization of the pinned layer and the free layer. To copewith it, the nonmagnetic layer 4 is first formed and the upper magneticlayer 2 next, as shown in FIG. 59A. This process permits the sidesurface of the contact through hole CH to be covered with the metalbuffer layer and the crystallinity of the magnetic material buried inthe contact through hole CH is improved. As a result, the magneticmaterial in the through hole CH can magnetically rotate together withthe magnetic layer around it and contributes to generating MR changessensitive to the signal magnetic field.

[0353] Also when the magnetic layer appearing at the bottom of thethrough hole CH is shaved by sputtering etching in the process of boringthe through hole CH or before the process of burying a film, the samebuffering effect is ensured by forming the spacer layer 4 on the lowermagnetic layer 1 as shown in FIG. 59B. After the through hole is opened,the upper spacer layer 4 and the upper magnetic layer 2 can be stackedas shown in FIG. 59C.

[0354] If the insulating layer 3 is etched by RIE using a Freon-familygas, a carbon film CF may deposit on the bottom of the through hole CH(i.e. on the top surface of the lower magnetic layer 1) as shown in FIG.60A under certain etching conditions. This carbon film CF also functionsas a spacer layer 4, and the same buffering effect is obtained in thestacked structure as shown in FIG. 60B.

[0355] The through hole inside surface of the contact through hole CH isnot necessarily covered by the spacer layer 4. For example, the copperspacer layer 4 may have pin holes or may have a mesh-like structure inthe contact through hole CH. The lack of the spacer layer 4 limits themagnetic contact area.

Seventeenth Example

[0356] As the seventeenth example, a process for burying the contactthrough hole with a magnetic material by plating will be explained.

[0357] If plating is used to bury the contact through hole with amagnetic layer, growth of the magnetic layer starts from the bottom ofthe through hole. Therefore defects can be decreased significantly.

[0358] For example, as shown in FIG. 61A, a SiO₂ insulating layer 3 isformed on the lower magnetic layer 1, and the contact through hole CH isformed thereafter. Subsequently, an electrode is connected to themagnetic layer 1, and the structure is immersed in a plating bath PL. Ifthe structure is immersed in a NiFe plating bath PL, growth starts fromthe top surface of CoFe as the magnetic layer 1 exposed on the bottom ofthe contact through hole CH. In this case, a Cu spacer layer 4 (notshown) may be stacked beforehand on the top surface of the CoFe magneticlayer 1.

[0359] The NiFe layer 2 having grown from the bottom of the contactthrough hole spreads out spherically just exiting the through hole CH,and starts rapidly enlarging its surface area. Therefore, under aconstant plating current, the growth speed decelerates. As such, whenplating is used for an extremely minute contact through hole, the timingof plating for burying the through hole can be controlled by appropriateadjustment of the plating time. As such, the magnetic film formed in thecontact through hole by plating has less defects, and expresses largeMR.

[0360] Then, the antiferromagnetic layer 6 is formed and themagnetization of the ferromagnetic layer 2 is fixed in one direction bythe antiferromagnetic layer 6. According to the embodiment, it becomespossible to control the magnetic domain of the ferromagnetic layer 2 bystacking the antiferromagnetic layer after burying the contact throughhole CH by a plating technique. As a result, a MR element with a lownoise can be realized and one problem of the aforementioned prior art(M. Munoz (Applied Physics Letters vol.79,No.18, pp2946-2948(2001)) canbe solved

Eighteenth Example

[0361] As the eighteenth example of the invention, a method offabricating a MR element having a nanocontact will be explained, inwhich the electrical flow direction is parallel to the film plane.

[0362]FIG. 62 is a schematic diagram that shows configuration of the MRelement taken as this example. That is, halfway of the electric currentfrom the first electrode EL1 to the second electrode EL2, the pinnedlayer 1, current-confining (A-B) region PC and free layer 2 are located.In this example, the signal magnetic field SM enters in the free layer 2from the part of the second electrode EL2.

[0363]FIGS. 63A through 63D are diagrams illustrating a process offabricating such a MR element.

[0364] First as shown in FIG. 63A, a CoFe magnetic layer (5 nm thick) FMis formed, and a PtMn anti-ferromagnetic layer 6 (15 nm thick) is formedthereon. Further, photo resist PR is formed patterned thereon such thatits edge (end) resides on the position for confining the current.

[0365] Next as shown in FIG. 63B, part of the PtMn layer 6 overlying theCoFe layer FM to be used as the free layer is removed by ion milling.

[0366] Next as shown in FIG. 63C, trimming is carried out by beamscanning by FIB along the edge of the photo resist PR to for thecurrent-throttling portion PC, As a result of the processing, theconfiguration as shown in FIG. 63D is obtained. Thereafter, the firstand second electrodes EL1, EL″ are formed.

[0367] However, on the sectional surface of the free layer 2 taken alongthe A-B line of FIG. 63D, the upper perimeter of the free layer 2 isundesirably rounded as shown in FIG. 64 due to influences of the FIBbeam profile, and makes it difficult to control the resistance value.However, this “rounding” of the magnetic layer FM can be prevented byusing a protective film PF and carrying out the FIB processing frombeyond the protective film PF. The protective film PF is preferably ahigh-resistance film like an insulating film to divide the current withthe magnetic film.

[0368]FIG. 66 shows an aspect of an element processed from the state ofFIG. 63B by coating a photo resist to form a protective layer PR on thefree layer. In this example, the processing for making the currentthrottling structure by FIB is conducted from this state. It results inprotecting surfaces of the pinned layer 1 and the free layer 2 when theyare processed by FIB etching, and therefore minimizes fluctuation ofresistance by the “rounding”.

[0369] It is also possible to make out the current-throttling narrowerthan the processing width by making use of implantation of gallium (Ga).

[0370]FIG. 67 is a schematic diagram that shows an aspect of an elementin which Ga has been introduced into an end portion of theFIB-processing portion. In the Ga-introduced region IZ, crystals of theCeFe layers 1, 2 are broken, and their resistance values rise. Thus theFIB processing result in making a junction effectively narrowed byseveral to ten and several nm than the physical processing width fromopposite sides. Thus, by implantation of FIB source particles such asGa, a substantially narrower contact than the physical processing widthcan be made.

[0371] MR characteristics can be even improved by irradiating thecurrent-throttling with EB in order to anneal the crystal defectthereof.

[0372] While the present invention has been disclosed in terms of theembodiment in order to facilitate better understanding thereof, itshould be appreciated that the invention can be embodied in various wayswithout departing from the principle of the invention. Therefore, theinvention should be understood to include all possible embodiments andmodification to the shown embodiments which can be embodied withoutdeparting from the principle of the invention as set forth in theappended claims.

What is claimed is:
 1. A magnetoresistance effect element comprising: afirst ferromagnetic layer; an insulating layer overlying said firstferromagnetic layer; and a second ferromagnetic layer overlying saidinsulating layer, said insulating layer having a through holepenetrating its thickness direction at its predetermined position, saidfirst ferromagnetic layer and said second ferromagnetic layer beingelectrically connected to each other via said through hole, and saidthrough hole having an opening width not larger than 20 nm.
 2. Amagnetoresistance effect element according to claim 1, wherein anelectric resistance between said first ferromagnetic layer and saidsecond ferromagnetic layer changes with a relative arrangement ofmagnetizations of said first and second ferromagnetic layers.
 3. Amagnetoresistance effect element according to claim 1, wherein saidthrough hole converges toward said first ferromagnetic layer, and theconverged end of said through hole defines the opening width.
 4. Amagnetoresistance effect element according to claim 1, wherein saidinsulating layer has a plurality of said through holes.
 5. Amagnetoresistance effect element according to claim 1, whereinresistance between said first ferromagnetic layer and said secondferromagnetic layer is in a range from 5 Ω to 100 Ω, and amagnetoresistance ratio of the magnetoresistance effect element is notsmaller than 20%.
 6. A magnetoresistance effect element according toclaim 1, wherein said insulating layer is a polymer, or an oxide,nitride or fluoride containing at least one element selected from thegroup consisting of aluminum (Al), titanium (Ti), tantalum (Ta), cobalt(Co), nickel (Ni), silicon (Si), zirconium (Zr), hafnium (Hf) and iron(Fe), and said first and second ferromagnetic layers are made of iron(Fe), cobalt (Co), nickel (Ni), or made of an alloy, an oxide, a nitrideor a Heusler alloy containing at least one element selected from thegroup consisting of iron (Fe), cobalt (Co), nickel (Ni), manganese (Mn)and chromium (Cr), or made of a compound semiconductor or an oxidesemiconductor including at least one element selected from the groupconsisting of iron (Fe), cobalt (Co), nickel (Ni), manganese (Mn) andchromium (Cr).
 7. A magnetoresistance effect element according to claim1, wherein an additive element which is different from elementscomposing said first and second ferromagnetic layers is incorporated atsaid connected portion between said first and second ferromagneticlayers, and a thickness of said connected portion where said additiveelement is incorporated is not larger than 10 atomic layers.
 8. Amagnetoresistance effect element including a plurality of themagnetoresistance effect elements according to claim 1, wherein themagnetoresistance effect elements are formed in one body andelectrically connected in series.
 9. A magnetic reproducing elementcomprising a magnetoresistance effect element including: a firstferromagnetic layer; an insulating layer overlying said firstferromagnetic layer; and a second ferromagnetic layer overlying saidinsulating layer, said insulating layer having a through holepenetrating its thickness direction at its predetermined position, saidfirst ferromagnetic layer and said second ferromagnetic layer beingelectrically connected to each other via said through hole, and saidthrough hole having an opening width not larger than 20 nm, saidmagnetoresistance effect element being provided on a path of themagnetic flux emitted from a magnetic recording medium so that saidfirst and second ferromagnetic layers are serially aligned on a path ofthe magnetic flux emitted from a magnetic recording medium, and saidmagnetoresistance effect element detects a difference betweenmagnetization directions of said first and second ferromagnetic layersas a resistance change.
 10. A magnetic reproducing element according toclaim 9, wherein one of said first and second ferromagnetic layerslocated remoter from said magnetic recording medium is pinned inmagnetization in one direction.
 11. A magnetic reproducing elementcomprising a magnetoresistance effect element including: a firstferromagnetic layer; an insulating layer overlying said firstferromagnetic layer; and a second ferromagnetic layer overlying saidinsulating layer, said insulating layer having a through holepenetrating its thickness direction at its predetermined position, saidfirst ferromagnetic layer and said second ferromagnetic layer beingelectrically connected to each other via said through hole, and saidthrough hole having an opening width not larger than 20 nm, and saidmagnetoresistance effect element being arranged so as to make a mainplane of said first ferromagnetic layer being substantiallyperpendicular to a recording surface of said magnetic recording medium.12. A magnetoresistance effect element according to claim 11, whereinsaid through hole is out of a center of symmetry in major plane of saidinsulating layer toward said magnetic recording medium.
 13. A magneticmemory comprising: magnetoresistance effect element including: a firstferromagnetic layer being pinned in magnetization in a first direction;an insulating layer overlying said first ferromagnetic layer; a secondferromagnetic layer overlying said insulating layer, said secondferromagnetic layer being free in direction of magnetization, and atleast one of a reading and a writing being executable by flowing acurrent in a direction of its layer thickness; a nonmagneticintermediate layer overlying said second ferromagnetic layer; and athird ferromagnetic layer overlying said nonmagnetic intermediate layerand being pinned in magnetization in a second direction substantiallyopposite from said first direction, said insulating layer having athrough hole penetrating its thickness direction at its predeterminedposition, said first ferromagnetic layer and said second ferromagneticlayer being electrically connected to each other via said through hole,and said through hole having an opening width not larger than 20 nm. 14.A magnetic memory according to claim 13, further comprising a pair ofelectrodes which supply said current, said electrodes partly cover amajor plane of said first and second ferromagnetic layers, and saidthrough hole being provided between said electrodes.
 15. A magneticmemory comprising: magnetoresistance effect element including: a firstferromagnetic layer being pinned in magnetization in a first direction;an insulating layer overlying said first ferromagnetic layer; a secondferromagnetic layer overlying said insulating layer, said secondferromagnetic layer being free in direction of magnetization, and atleast one of a reading and a writing being executable by flowing acurrent in a direction of its layer thickness; a nonmagneticintermediate layer overlying said second ferromagnetic layer; and athird ferromagnetic layer overlying said nonmagnetic intermediate layerand being pinned in magnetization in said first direction, saidinsulating layer having a through hole penetrating its thicknessdirection at its predetermined position, said first ferromagnetic layerand said second ferromagnetic layer being electrically connected to eachother via said through hole, and said through hole having an openingwidth not larger than 20 nm.
 16. A magnetic memory according to claim15, further comprising a pair of electrodes which supply said current,said electrodes partly cover a major plane of said first and secondferromagnetic layers, and said through hole being provided between saidelectrodes.
 17. A magnetic memory comprising a magnetoresistance effectelement including: a first ferromagnetic layer; an insulating layeroverlying said first ferromagnetic layer; and a second ferromagneticlayer overlying said insulating layer, said insulating layer having athrough hole penetrating its thickness direction at its predeterminedposition, said first ferromagnetic layer and said second ferromagneticlayer being electrically connected to each other via said through hole,and said through hole having an opening width not larger than 20 nm, oneof said first and second ferromagnetic layers being pinned inmagnetization in a first direction, another of said first and secondferromagnetic layers being free in direction of magnetization and atleast one of reading and writing being executable by flowing a currentin a direction of thicknesses of said first and second ferromagneticlayers.
 18. A magnetic memory according to claim 17, further comprisinga pair of electrodes which supply said current, said electrodes partlycover a major plane of said first and second ferromagnetic layers, andsaid through hole being provided between said electrodes.
 19. A magneticmemory comprising a plurality of memory cells, said memory cells beingtwo-dimensionally arranged, each of said memory cells being separatedeach other by insulating region, a current being provided to each ofsaid memory cells by a conductive prove or fixed wiring, an absolutevalue of a writing current provided to each of said memory cells beinglarger than an absolute value of a reading current provided to each ofsaid memory cells, and each of said memory cells having amagnetoresistance effect element including: a first ferromagnetic layer;an insulating layer overlying said first ferromagnetic layer; and asecond ferromagnetic layer overlying said insulating layer, saidinsulating layer having a through hole penetrating its thicknessdirection at its predetermined position, said first ferromagnetic layerand said second ferromagnetic layer being electrically connected to eachother via said through hole, and said through hole having an openingwidth not larger than 20 nm, one of said first and second ferromagneticlayers being pinned in magnetization in a first direction, another ofsaid first and second ferromagnetic layers being free in direction ofmagnetization and said writing current and said reading current beingprovided in a direction of thicknesses of said first and secondferromagnetic layers.